利用^(18)O追踪研究退火对InAs/Al_(2)O_(3)堆栈中界面元素扩散行为的影响  

Study on Interface Element Diffusion Behavior of InAs/Al_(2)O_(3) Stacks upon Post Deposition Annealing by ^(18)O Tracking

作　　者：井美艺 冯泽 刘澳 郑旭 刘晖 王维华 卢峰[1] 程雅慧 罗锋 孔亚萍 李治云 黄荣[2] 董红[1] JING Mei-yi;FENG Ze;LIU Ao;ZHENG Xu;LIU Hui;WANG Wei-Hua;LU Feng;CHENG Ya-hui;LUO Feng;KONG Ya-ping;LI Zhi-yun;HUANG Rong;DONG Hong(College of Electronic Information and Optical Engineering,Nankai University,Tianjin 300350,China;Vacuum Interconnected Nanotech Workstation,Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Science(CAS),Suzhou 215123,China)

机构地区：[1]南开大学电子信息与光学工程学院,天津300350 [2]中国科学院苏州纳米技术与纳米仿生研究所真空互联纳米技术工作站,江苏苏州215123

出　　处：《真空电子技术》2023年第6期57-63,共7页Vacuum Electronics

基　　金：国家重点研发计划项目(2018YFB2200500,2018YFB2200504);国家自然科学基金项目(22090010,22090011)。

摘　　要：研究了Al_(2)O_(3)/InAs堆栈在退火前后表面界面的物理和化学,通过X射线光电子能谱仪发现了扩散的In原子总是以氧化态的形式存在,通过湿法去除InAs衬底的氧化物后,利用18 O的水蒸汽预先氧化,再利用飞行时间二次离子质谱分析追踪18 O原子,发现In原子与界面氧原子各自独立扩散。阐明界面O原子的扩散物理,为Ⅲ-Ⅴ族半导体基器件的应用奠定基础。Surface and interface physics and chemistry of Al_(2)O_(3)/InAs stack before and after annealing are studied.It is found that the diffused indium atoms always show oxide state on InAs surface via X-ray photoelectron spectroscopy.Native oxides from the InAs sample are removed by wet process,and then the InAs sample is pre-oxidized with 18 O water vapor.The 18 O atoms are tracked by time-of-flight secondary ion mass spectrometry.It is found that indium atoms and interface oxygen atoms diffuse independently.This work sheds light the diffusion physics of interface oxygen atoms,laying the foundation for the application of III-V semiconductor based devices.

关 键 词：高K栅介质 Ⅲ-Ⅴ族半导体 原子层沉积 元素扩散 沉积后退火 

分 类 号：TN101[电子电信—物理电子学]