采用约束性逐级低温退火实现碳化硅与硅的低应力异质键合  

Realization of Low-Stress SiC to Si Heterobonding by Constrained Stepwise Low Temperature Annealing

作　　者：张丹青 宋洁晶[1] 商庆杰[1] 杨志[1] Zhang Danqing;Song Jiejing;Shang Qingjie;Yang Zhi(The 13^(th)Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2023年第12期2035-2040,共6页Micronanoelectronic Technology

摘　　要：基于直接键合方法,通过约束性逐级低温退火实现了碳化硅与硅的低应力异质键合,得到了翘曲度小于5μm、平均应力约32 MPa、键合完整性极高的6英寸(1英寸=2.54 cm)晶圆。通过水接触角测试、红外图像检测、翘曲度和应力测试、扫描电子显微镜(SEM)、能量色散谱仪(EDS)等分析了键合结果,并采用“刀片法”测试其键合面的键合能。键合完成的晶圆具有键合完整性高、键合强度强、晶圆应力小等特点。通过对比晶圆表面材料、退火温度、退火方式等相关的实验结果,对该低应力异质键合技术的工艺原理进行了解释。该技术路线对Si和SiC的三维集成有重要意义,且该方法可以推广用于更多种类材料的低应力异质键合。Based on the direct bonding method,the low stress heterobonding between silicon carbide(SiC)to silicon(Si)was achieved by the constrained stepwise low temperature annealing.A 6-inch(1 inch=2.54 cm)wafer with a warpage of less than 5μm,an average stress of about 32 MPa,and extremely high bonding integrity was obtained.The bonding results were analyzed by water contact angle(WCA)measurement,infrared image detection,warping degree and stress measurement,scanning electron microscope(SEM)and energy dispersive spectrometer(EDS).And the bonding energy of the bonding surface was measured by"razor blade method".The bonded wafer has the characteristics of high bonding integrity,strong bonding strength and low wafer stress.By comparing experimental results related to wafer surface materials,annealing temperature and annealing method,the process principle of the low stress heterobonding technology was explained.The technical route is of great significance for the three-dimensional integration of Si and SiC,and the method can be extended to low stress heterobonding of more types of materials.

关 键 词：碳化硅 硅 异质键合 直接键合 低应力 约束性逐级低温退火 

分 类 号：TN305.93[电子电信—物理电子学]