基于TCAD技术的碳化硅槽栅MOSFET器件设计  

Design of silicon carbide trench gate MOSFET devices with TCAD technology

作　　者：刘彦娟 韩迪 贾德振 LIU Yanjuan;HAN Di;JIA Dezhen(College of Electronical and Information Engineering,Shenyang Aerospace University,Shenyang 110136,China)

机构地区：[1]沈阳航空航天大学电子信息工程学院,辽宁沈阳110136

出　　处：《实验技术与管理》2023年第11期142-147,共6页Experimental Technology and Management

基　　金：辽宁省科技厅资助项目(2021-BS-192);辽宁省教育厅资助项目(LJKZ0174);辽宁省教改资助项目(辽教办〔2021〕254号)。

摘　　要：针对碳化硅槽栅MOSFET器件内部寄生二极管的反向恢复特性差的问题,设计了碳化硅槽栅MOSFET器件新结构,通过在碳化硅槽栅MOSFET器件元胞内部集成多晶硅/碳化硅异质结二极管,在不使器件的其他电学特性退化的基础上,改善器件的反向恢复特性。基于TCAD工具——ATLAS二维的半导体工艺与器件仿真软件,对碳化硅槽栅MOSFET器件的I-V特性、击穿特性以及反向恢复特性进行了研究。研究结果表明,与常规的碳化硅槽栅MOSFET器件相比,新结构的反向恢复特性明显改善,反向恢复时间减小了48.8%,反向恢复电荷减小了94.1%,反向峰值电流减小了82.4%。To address the problem of poor reverse recovery characteristics of internal parasitic diodes in silicon carbide trench gate MOSFET devices,a new structure of silicon carbide trench gate MOSFET device,which integrates polysilicon/silicon carbide hetero-junction diodes,is designed to improve the reverse recovery characteristics of the devices,without degrading the other electrical characteristics.The electrical performances of devices,including I-V characteristics,breakdown characteristics,and reverse recovery characteristics,are investigated based on the TCAD tool:ATLAS two-dimensional semiconductor process and device simulation software.The study results show that compared with conventional silicon carbide trench gate MOSFET devices,the reverse recovery characteristics of the new structure are significantly improved,such as a 48.8%reduction in reverse recovery time,94.1%reduction in reverse recovery charge,and 82.4%reduction in reverse peak current.

关 键 词：碳化硅器件 槽栅MOSFET器件 反向恢复特性 多晶硅/碳化硅异质结 半导体功率器件 

分 类 号：TN386.1[电子电信—物理电子学]