SRAM单元的单粒子效应三维敏感区形状参数模拟仿真方法  

A method for simulating three-dimensional sensitive volume parameters in representation of single event effect of SRAM unit

作　　者：王玉才 刘艳 曹荣幸 李红霞 刘洋 郑澍 韩丹 薛玉雄 WANG Yucai;LIU Yan;CAO Rongxing;LI Hongxia;LIU Yang;ZHENG Shu;HAN Dan;XUE Yuxiong(School of Electrical and Energy Power Engineering,Yangzhou University,Yangzhou 225127,China)

机构地区：[1]扬州大学电气与能源动力工程学院,扬州225127

出　　处：《航天器环境工程》2023年第6期622-629,共8页Spacecraft Environment Engineering

基　　金：国家自然科学基金项目(编号:12004329);强脉冲辐射环境模拟与效应国家重点实验室专项(编号:SKLIPR2115);江苏省研究生实践创新计划项目(编号:SJCX22_1704);扬州宽禁带半导体电子材料与器件实验室开放基金项目(编号:YZ202026301,YZ202026306)。

摘　　要：为揭示静态随机存储器(SRAM)辐射效应以及内部电荷收集变化规律,从而为器件辐射效应及加固提供有效的仿真数据支撑,针对器件在轨单粒子翻转(SEU),提出一种SRAM单元的三维敏感区形状参数模拟仿真方法。首先通过器件级和电路级仿真相结合的手段,利用计算机辅助设计(TCAD)构建三维模型;然后通过仿真获得重离子从不同方向入射后的单粒子瞬态电流,将此电流作为故障注入到65 nm SRAM单元的电路级模型中仿真SEU;最终得到65 nm SRAM单元的单粒子效应(SEE)三维敏感区形状参数。In order to reveal the variation laws of radiation effect and internal charge collection in static random access memory(SRAM)so as to provide effective simulation data support for the device radiation hardening,a simulation method was proposed for determining three-dimensional sensitive volume parameters according to the on-orbit single event upset(SEU)of SRAM unit.Firstly,by combining simulations of devicelevel and circuit-level,the three-dimensional model was constructed using technology computer aided design(TCAD).The single event transient current was obtained by simulating heavy ion incidence from different directions,and then the current was input into the circuit-level model of the 65 nm SRAM unit as a fault to simulate SEU.Finally,the SEE-induced three-dimensional sensitive volume parameters of the 65 nm SRAM unit were obtained.

关 键 词：静态随机存储器 单粒子效应 器件级仿真 电路级仿真 三维敏感区 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP391.99[自动化与计算机技术—计算机应用技术]