GaN薄膜的太赫兹光谱响应研究  

Terahertz Spectral Response Study of GaN Thin Films

作　　者：韩烨 王党会[1] 许天旱[1] HAN Ye;WANG Danghui;XU Tianhan(School of New Energy,Xi'an Shiyou University,Xi'an 710065,China)

机构地区：[1]西安石油大学新能源学院,西安710065

出　　处：《电子与封装》2024年第1期56-60,共5页Electronics & Packaging

摘　　要：目前,太赫兹时域光谱(THz-TDS)已经成为研究固体光学参数及色散关系的有效工具。采用太赫兹时域光谱仪对纤锌矿结构GaN薄膜在0~8.0 THz范围内的吸收光谱、介电常数、折射率以及介电损耗等进行了研究。研究结果表明,频率为4.65 THz的太赫兹响应是由GaN的E2(low)声子振动模式主导的,获得的低频介电常数8.9和高频介电常数6.0与理论值接近;进一步研究了频率在4.24~4.40 THz之间的太赫兹介电常数响应谱,获得的GaN薄膜的中心振动频率与太赫兹吸收光谱一致,介电损耗值很小且逐渐趋近于0,表明GaN有良好的介电特性。得出的结论拓展了GaN基电子元器件在THz波段中的应用,对进一步研究GaN基电子元器件在THz波段的质量与可靠性具有借鉴意义。At present,terahertz time-domain spectroscopy(THz-TDS)has become an effective tool to investigate the optical parameters and dispersion relationships of solids.The absorption spectra,dielectric constants,refractive indices and dielectric losses of GaN thin films with fibrillar zincite structure in the range of 0-8.0 THz are investigated using terahertz time-domain spectroscopy.The results show that the terahertz response with a frequency of 4.65 THz is dominated by the E2(low)phonon mode of GaN,and the obtained low-frequency dielectric constant of 8.9 and high-frequency dielectric constant of 6.0 are close to the theoretical values.The terahertz dielectric constant response spectra with frequencies between 4.24 THz and 4.40 THz are further investigated.The obtained center vibration frequencies of the GaN films are consistent with the terahertz absorption spectra,and the value of the dielectric loss is very small and tends to be close to 0 gradually,indicating that GaN has good dielectric properties.The conclusions drawn expand the application of GaN-based electronic components in the THz band and are useful for further research on the quality and reliability of GaN-based electronic components in the THz band.

关 键 词：太赫兹时域光谱 GAN薄膜 光学性质 

分 类 号：TN304[电子电信—物理电子学] O484.1[理学—固体物理]