高工作温度碲镉汞p-on-n中波1024×768焦平面探测器  

High operating temperature p-on-n HgCdTe MWIR 1024×768 FPA detector

作　　者：何天应 秦强[1] 孔金丞[1] 覃钢[1] 杨超伟[1] 王向前[1] 李红福 王琼芳[1] 李永亮[1] 杨翼虎 李轶民 宋林伟[1] 杨秀华[1] 罗云[1] 陈楠[1] 胡旭[1] 赵俊[1] 赵鹏[1] HE Tian-Ying;QIN Qiang;KONG Jin-Cheng;QIN Gang;YANG Chao-Wei;WANG Xiang-Qian;LI Hong-Fu;WANG Qiong-Fang;LI Yong-Liang;YANG Yi-Hu;LI Yi-Min;SONG Lin-Wei;YANG Xiu-Hua;LUO Yun;CHEN Nan;HU Xu;ZHAO Jun;ZHAO Peng(Kunming Institute of Physics,Kunming 650223,China)

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外与毫米波学报》2023年第6期711-715,共5页Journal of Infrared and Millimeter Waves

基　　金：Supported by the National Key Research and Development Program of China(SQ2020YFB200190)。

摘　　要：提高红外探测器的工作温度对于减小红外系统的尺寸、重量和功耗至关重要,进而实现结构紧凑和成本低廉的红外系统。昆明物理研究所多年来对掺铟和砷离子注入技术的HgCdTe p-on-n技术进行了优化,实现了性能优异的中波红外探测器的研制。本文报道了高工作温度中波1024×768@10μm红外焦平面阵列探测器的最新结果,并介绍了在150 K工作温度下的器件性能。结果标明,器件在150 K下截止波长为4.97μm,并测得了不同工作温度下的NETD、暗电流和有效像元率。此外,还展示了在150 K的工作温度下焦平面器件的红外图像,并呈现了99.4%的有效像元率。Increasing the operating temperature for infrared detectors is critical to reduce the size,weight and power of infrared(IR)systems.Such systems are essential to implement a compact and low-cost production of IR systems.For the Kunming Institute of Physics(KIP),HgCdTe standard p-on-n technology with indium doping and arsenic ion implantation technology has been optimized for many years and mid-wavelength IR(MWIR)de⁃tectors with excellent electro-optical performance were realized.This paper reports the latest results of the MWIR focal plane array(FPA)detector with a high operating temperature(HOT).Performances of the 1024×768@10μm pitch MW detector working above 150 K were presented.The detector presenting a cut-off wavelength above 4.97μm at 150 K has been developed.The noise-equivalent temperature difference(NETD),dark current and operability at different operating temperatures were attained.Additionally,the IR image taken with the MWIR HgCdTe-based FPA and processed at an operating temperature of 150 K was presented and retained an operability of 99.4%.

关 键 词：碲镉汞 高工作温度 中波红外 噪声等效温差 暗电流 

分 类 号：TN215[电子电信—物理电子学]