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作 者:乔骁骏 李雅青 丑修建[1] Qiao Xiaojun;Li Yaqing;Chou Xiujian(School of Semiconductor and Physics,North University of China,Taiyuan 030051,China)
出 处:《半导体技术》2024年第2期138-142,共5页Semiconductor Technology
基 金:国家自然科学基金面上项目(62171415);山西省自然科学基金(202203021222068)。
摘 要:研究了铁酸铋薄膜的柔性化可控制造方法及其电畴调控动态。利用脉冲激光沉积法制备了周期性畴结构的铁酸铋薄膜,结合可控剥离技术,完成了铁酸铋薄膜从刚性基底到柔性基底的制备过程。利用原子力显微镜和压电力显微镜技术对柔性化铁酸铋薄膜的微观形貌和铁电特性进行表征。结果表明,柔性化后的铁酸铋薄膜保持完整的表面形貌特征(粗糙度保持不变),电畴反转特性保持可调,且保持良好的铁电特性及电畴反转响应。该研究为铁酸铋薄膜的柔性化制备提供了一种新思路。The flexible and controllable manufacturing methods of bismuth ferrite thin films and domain control dynamics were studied.Bismuth ferrite thin films with periodic domain structures were prepared by pulse laser deposition method.Combined with controlled spalling technology,the preparation process of bismuth ferrite thin films from rigid substrate to flexible substrate was completed.The micro-morphology and ferroelectric property of flexible bismuth ferrite thin films were characterized by atomic force microscopy and piezoelectric force microscopy.The results indicate that the flexible bismuth ferrite thin films remain original surface morphology characteristics(with unchanged roughness),and the domain reversal characteristics remain the controllable state,and the flexible bismuth ferrite thin films maintain good ferroelectric properties and domain reversal response.This study provides a new idea for the flexible preparation of bismuth ferrite thin films.
分 类 号:TM225[一般工业技术—材料科学与工程] TN304.055[电气工程—电工理论与新技术]
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