基于碳化硅等离子体器件的功率脉冲锐化技术  

Power pulse sharpening technology based on silicon carbide plasma devices

作　　者：郭登耀 汤晓燕[1] 宋庆文[1] 周瑜 郭京凯 孙乐嘉 袁昊[1] 杜丰羽 张玉明[1] Guo Dengyao;Tang Xiaoyan;Song Qingwen;Zhou Yu;Guo Jingkai;Sun Lejia;Yuan Hao;Du Fengyu;Zhang Yuming(School of Microelectronics,Xidian University,Xi’an 710071,China;Xidian-Wuhu Research Institute,Wuhu 241002,China)

机构地区：[1]西安电子科技大学微电子学院,西安710071 [2]西安电子科技大学芜湖研究院,安徽芜湖241002

出　　处：《强激光与粒子束》2024年第1期43-48,共6页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(62174123)。

摘　　要：利用Sentaurus搭建了碳化硅漂移阶跃恢复二极管(DSRD)与雪崩整形二极管(DAS)全电路仿真模型,研究了碳化硅等离子体器件在脉冲锐化方面的能力,并且通过器件内部等离子浓度分布解释了这两种器件实现脉冲锐化的机制。借助碳化硅DSRD可以将峰值超过千伏的电压脉冲的前沿缩短到300 ps;碳化硅DSRD与DAS的组合可以输出脉冲前沿在35 ps、峰值超过2 kV的电压脉冲。仿真与实验发现当触发脉冲与碳化硅DAS匹配时,可以实现快速开启后快速关断,得益于碳化硅DAS这种神奇现象,可以将峰值在两千伏以上脉冲的半高宽缩小到百皮秒量级;通过频谱分析发现脉冲经过DAS整形后,其最高幅值−30 dB对应的频谱带宽扩大了37倍,达到7.4 GHz。A full-circuit simulation model of silicon carbide Drift Step Recovery Diode(DSRD)and DiodeAvalanche Shaper(DAS)was built based on Sentaurus.By use of simulation,this paper investigates the capability ofsilicon carbide plasma devices in pulse sharpening and explains the mechanism of pulse sharpening achieved by thesetwo devices through the plasma concentration distribution inside the devices.With the help of a silicon carbide DSRD,it is possible to reduce the pulse front of voltage pulses with peaks in excess of kilovolts to 300 ps.The combination ofthe silicon carbide DSRD and DAS can output voltage pulses with a pulse front of 35 ps and a peak of more than twokilovolts.Simulations and experiments show that when the trigger pulse is matched to the silicon carbide DAS,fastturn-on and turn-off can be achieved.Thanks to the magical phenomenon of silicon carbide DAS,it can reduce thehalf-height width of pulses with peak values above 2 kV to the order of 100 ps.Through spectrum analysis,it is foundthat after the pulse is sharpened by DAS,its−30 dB spectral width is expanded by a factor of 37 to 7.4 GHz.

关 键 词：碳化硅 漂移阶跃恢复二极管 雪崩整形二极管 超宽带 

分 类 号：TN31[电子电信—物理电子学]