有源区掺杂的AlGaN基深紫外激光二极管性能优化  

Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region

作　　者：尹孟爽 张傲翔 张鹏飞[1] 贾李亚 王芳[1,2,3,4] 刘俊杰 刘玉怀 YIN Meng-Shuang;ZHANG Ao-Xiang;ZHANG Peng-Fei;JIA Li-Ya;WANG Fang;LIN Jun-Jie;LIU Yu-Huai(National Center for International Joint Research of Electronic Materials and Systems,International Joint-Laboratory of Electronic Materials and Systems of Henan Province,School of Electrical and Information Engineering,Zhengzhou University,Zhengzhou 450001,China;Institute of Intelligence Sensing,Zhengzhou University,Zhengzhou 450001,China;Research Institute of Industrial Technology Co.,Ltd.,Zhengzhou University,Zhengzhou 450001,China;Zhengzhou Way Do Electronics Co.,Ltd.,Zhengzhou 450001,China)

机构地区：[1]郑州大学电气与信息工程学院电子材料与系统国际联合研究中心河南省电子材料与系统国际联合实验室,郑州450001 [2]郑州大学智能传感研究院,郑州450001 [3]郑州大学产业技术研究院有限公司,郑州450001 [4]郑州唯独电子科技有限公司,郑州450001

出　　处：《原子与分子物理学报》2024年第3期170-175,共6页Journal of Atomic and Molecular Physics

基　　金：国家自然科学基金(62174148);国家重点研发计划(2022YFE0112000,2016YFE0118400);智汇郑州·1125聚才计划(ZZ2018-45);宁波2025科技创新重大专项(2019B10129)。

摘　　要：为了改善深紫外激光二极管的性能,本文提出了有源区量子势垒n掺杂、p掺杂和n-p掺杂三种结构.利用Crosslight软件,对原始结构和有源区掺杂的三种结构进行仿真研究,比较四种结构的P-I特性曲线、V-I特性曲线、载流子浓度、辐射复合速率和能带图.仿真结果表明,有源区量子势垒n-p掺杂结构的性能更优,其阈值电压和阈值电流分别为4.40V和23.8mA;辐射复合速率达到1.64×10^(28)cm^(-3)/s;同一注入电流下电光转换效率达到42.1%,比原始结构增加了3.9%;改善了深紫外激光二极管的工作性能.In order to improve the operating performance of the deep-ultraviolet laser diodes(DUV-LD),three structures of n-doped,p-doped and n-p-doped with active region quantum barrier are proposed in this paper.Using Crosslight software,the original structure and the three active region doped structures are simulated and studied to compare the P-I characteristic curves,V-I characteristic curves,carrier concentrations,radiation recombination rates and energy band diagrams of the four structures.The simulation results show that the performance of n-p doped structure is better,i.e.,its threshold voltage and threshold current of the n-p doped structure decrease to 4.40 V and 23.8 mA,respectively;radiation recombination rate reaches 1.64cm-3/s;The electro-optical conversion efficiency reaches 42.1%at the same injection current,which increases 3.9%compared with the original structure and greatly improves the operating performance of the DUV-LD.

关 键 词：ALGAN 有源区 量子势垒 掺杂 深紫外激光二极管 

分 类 号：O472[理学—半导体物理]