梳齿结构深刻蚀工艺改进  

Deep etching process improvement of comb structure

作　　者：杜广森 张富强 徐锡金[1] DU Guangsen;ZHANG Fuqiang;XU Xijin(School of Physics and Technology,University of Jinan,Jinan 250055,China;Institute of MicroNano and Intelligent Manufacturing,Shandong Institutes of Industrial Technology,Jinan 250101,China;School of Applied Science,Beijing Information Science and Technology University,Beijing 100192,China)

机构地区：[1]济南大学物理学院,山东济南250055 [2]山东产业技术研究院微纳与智能制造研究院,山东济南250101 [3]北京信息科技大学理学院,北京100192

出　　处：《传感器与微系统》2024年第2期49-51,56,共4页Transducer and Microsystem Technologies

摘　　要：梳齿型谐振式传感器对谐振器梳齿的形貌有很高的要求,需要梳齿侧壁很好的垂直度、粗糙度以及片间均匀性等。采用感应耦合等离子体(ICP)深硅刻蚀工艺对具有深宽比较大的梳齿结构进行深刻蚀研究。影响深硅刻蚀的主要因素包括SF_(6)和C_(4)F_(8)气体流量、腔室压力、刻蚀与钝化保护时间、下基板功率等工艺参数,着重研究了片间均匀性、垂直度、粗糙度等影响结构性能的几个方面,得到了宽4.5μm、深70μm的梳齿结构,垂直度为89.7°,侧壁粗糙度46 nm,均匀性1.2%的优化工艺,为高精度MEMS梳齿型传感器的制作提供了基础。Comb-type resonant sensors have high demands on the morphology of the resonator combs,good perpendicularity,roughness and interchip uniformity of the comb sidewalls are required.Inductively coupled plasma(ICP)deep silicon etching process is used for deep etching research on comb structure with large depth-to-width ratio.The main factors affecting deep silicon etching include SF_(6) and C_(4)F_(8) gas flow,chamber pressure,etching and passivation protection time,lower substrate power and other process parameters,this research focuses on several aspects which affect structural properties such as inter-slice uniformity,perpendicularity,roughness,etc.An optimized process by which a comb structure with width of 4.5μm,depth of 70μm,and with perpendicularity of 89.7°,sidewall roughness of 46 nm and uniformity of 1.2%is obtained,which provides the basis for the fabrication of high-precision MEMS comb-type sensors.

关 键 词：深刻蚀 刻蚀速率 均匀性 粗糙度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]