Virtex-5系列SRAM型FPGA单粒子效应重离子辐照试验技术研究  

Research on Heavy Ion Irradiation Test Method for Single Event Effects of Virtex-5 SRAM FPGA

作　　者：赖晓玲 郭阳明[1] 巨艇[2] 朱启[2] 贾亮[2] LAI Xiaoling;GUO Yangming;JU Ting;ZHU Qi;JIA Liang(School of Computer Science,Northwestern Polytechnical University,Xi'an 710072,China;Xi'an Institute of Space Radio Technology,Xi'an 710000,China)

机构地区：[1]西北工业大学计算机学院,西安710072 [2]中国空间技术研究院西安分院,西安710000

出　　处：《计算机测量与控制》2024年第1期304-311,共8页Computer Measurement &Control

基　　金：飞行器控制一体化技术国防科技重点实验室基金(6142219200205)。

摘　　要：针对SRAM型FPGA在空间辐射环境下易发生单粒子效应,影响星载设备正常工作甚至导致功能中断的问题,开展了SRAM型FPGA单粒子效应地面辐照试验方法研究,提出了配置存储器(CRAM)和块存储器(BRAM)的单粒子翻转效应测试方法,并以Xilinx公司工业级Virtex-5系列SRAM型FPGA为测试对象,设计了单粒子效应测试系统,开展了重离子辐照试验,获取了器件的单粒子闩锁试验数据和CRAM、BRAM以及典型用户电路三模冗余前后的单粒子翻转试验数据;最后利用空间环境模拟软件进行了在轨翻转率分析,基于CREME96模型计算得到XC5VFX130T器件配置存储器GEO轨道的单粒子翻转概率为6.41×10^(-7)次/比特·天。To address the problem that SRAM FPGA is prone to single event effect(SEE)in space radiation environment,which may affect the normal operation of space borne electronic equipment or even lead to functional interruptions,a research on the ground irradiation test method of SRAM FPGA's SEE was conducted.The single event upset(SEU)test method of CRAM and BRAM was proposed.The test system was designed using the Xilinx Virtex-5 series industrial-grade SRAM FPGA as the test object,and the heavy ion irradiation test was carried out.The device's single event latch-up(SEL)test data and the SEU test data of CRAM,BRAM,and the typical user circuits before and after TMR were obtained.Finally,the SEU rate was analyzed using space environment simulation software.Based on the CREME96 model,the SEU probability of CRAM of XC5VFX130T in GEO orbit was calculated to be 6.41×10^(-7)times/bit·day.

关 键 词：SRAM型FPGA 单粒子效应 单粒子翻转 单粒子闩锁 重离子辐照试验 

分 类 号：TP27[自动化与计算机技术—检测技术与自动化装置] TP274[自动化与计算机技术—控制科学与工程]