金薄膜辅助玻璃与砷化镓阳极键合  

Gold Film Assisted Glass and Gallium Arsenide Anode Bonding

作　　者：张蕾 阴旭[1] 刘翠荣[1] 刘淑文 王强[1] 许兆麒 Zhang Lei;Yin Xu;Liu Cuirong;Liu Shuwen;Wang Qiang;Xu Zhaoqi(School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China)

机构地区：[1]太原科技大学材料科学与工程学院,太原030024

出　　处：《微纳电子技术》2024年第1期153-159,共7页Micronanoelectronic Technology

基　　金：国家自然科学基金项目(52375365)。

摘　　要：采用磁控溅射技术在砷化镓(GaAs)表面沉积一层厚度为1μm的金薄膜,将其作为中间层成功实现了Borofloat(BF33)玻璃与GaAs的连接。阳极键合实验结果表明键合电流在短时间内达到峰值,之后迅速降低并且稳定在一个很小的数值范围内,且键合电流峰值随着键合温度与键合电压的升高而增大。通过扫描电子显微镜(SEM)和能谱仪(EDS)对玻璃-GaAs键合界面进行微观形貌观察。结果表明键合界面良好,在400℃、700 V的条件下,玻璃-GaAs键合强度可达到1.53 J/m^(2),且键合强度随着键合温度与键合电压的升高而增大。The gold film with a thickness of 1μm was deposited on the surface of gallium arsenide(GaAs)by magnetron sputtering technology.The connection between Borofloat(BF33)glass and GaAs was successfully realized with the gold film as an intermediate layer.The anode bonding experiment result shows that the bonding current reaches peak value in a short period of time,and then quickly decreases and stabilizes at a small range of values,and the peak value of bonding current increases with the increase of bonding temperature and bonding voltage.The glass-GaAs bonding interface was observed by scanning electron microscope(SEM)and energy dispersive spectrometer(EDS).The results show that the bonding interface is good,the glass-GaAs bonding strength can reach 1.53 J/m^(2) at 400℃and 700 V,and the bonding strength increases with the increase of bonding temperature and bonding voltage.

关 键 词：阳极键合 BF33玻璃 砷化镓(GaAs) 金薄膜 键合界面 

分 类 号：TN305.93[电子电信—物理电子学]