半导体碳化硅衬底的湿法氧化  

Wet Oxidation of Semiconducting Silicon Carbide Wafers

作　　者：鲁雪松 王万堂 王蓉[1,2] 杨德仁 皮孝东[1,2] LU Xuesong;WANG Wantang;WANG Rong;YANG Deren;PI Xiaodong(State Key Laboratory of Silicon and Advanced Semiconductor Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;College of Electrical Engineering,Zhejiang University,Hangzhou 310027,China)

机构地区：[1]浙江大学材料科学与工程学院,硅及先进半导体材料全国重点实验室,杭州310027 [2]浙江大学杭州国际科创中心,先进半导体研究院和浙江省宽禁带功率半导体材料与器件重点实验室,杭州311200 [3]浙江大学电气工程学院,杭州310027

出　　处：《人工晶体学报》2024年第2期181-193,共13页Journal of Synthetic Crystals

基　　金：国家自然科学基金(62274143,62204216);浙江省“尖兵”“领雁”研发计划(2022C01021,2023C01010);杭州市领军型创新创业引进培育计划(TD2022012);中央高校基本科研经费(226-2022-00200)。

摘　　要：半导体碳化硅(4H-SiC)材料具有硬度高、脆性大、化学性质稳定等特点,一般使用化学机械抛光工艺来加工4H-SiC以获得超光滑平坦表面。湿法氧化作为单晶4H-SiC化学机械抛光的重要过程,直接影响着化学机械抛光的速率和表面质量。本文综述了目前单晶4H-SiC湿法氧化的研究现状,讨论了4H-SiC湿法氧化工艺所选用的氧化剂,如KMnO_(4)、H_(2)O_(2)、K_(2)S_(2)O_(8)等。在此基础上,进一步总结了常用的氧化增效方法,如光催化辅助氧化、电化学氧化、芬顿反应等,并从理论计算的角度分析了单晶4H-SiC湿法氧化的机理,最后展望了4H-SiC湿法氧化未来的研究方向。Semiconducting silicon carbide(4H-SiC)exhibits characteristics of high hardness,notable brittleness,and excellent chemical stability.The commonly employed technique for achieving an ultra-smooth and flat surface is chemical mechanical polishing(CMP),which is utilized to process the 4H-SiC surface.Wet oxidation,as an important process of chemical-mechanical polishing of single-crystal 4H-SiC,directly affects the rate and surface quality of CMP.This paper provides a comprehensive overview of the current research status of wet oxidation of single-crystal 4H-SiC.It discusses the oxidants used in the wet oxidation of 4H-SiC,such as KMnO_(4),H_(2)O_(2),K_(2)S_(2)O_(8).Based on this,it further summarizes commonly employed oxidation-enhancement methods,including photocatalytic-assisted oxidation,electrochemical oxidation,and Fenton reaction.The mechanism of wet oxidation of single-crystal 4H-SiC is analyzed from the aspect of theoretical calculation,and the future research direction of wet oxidation of 4H-SiC is proposed.

关 键 词：碳化硅 半导体 加工 湿法氧化 化学机械抛光 材料去除率 

分 类 号：TN305[电子电信—物理电子学]