金属栅极中的功函数材料有效调节能力分析  

Analysis of the Effective Adjustment Ability of Work Function Materials in Metal Gates

作　　者：方精训 李二鹏 FANG Jingxun;LI Erpeng(Shanghai Huali Integrated Circuit Manufacturing Co.,Ltd.,Shanghai 201314,China)

机构地区：[1]上海华力集成电路制造有限公司,上海201314

出　　处：《集成电路应用》2024年第1期57-59,共3页Application of IC

摘　　要：阐述不同膜厚、氧化时间和顶层功函数材料制备方法下,氮化钛对器件有效功函数和漏电流的调控能力。氮化钛膜厚增加,器件有效功函数增加的速率逐渐变缓,由0.16eVnm^(-1)(0~2.1nm)下降到0.11eVnm^(-1)(2.1~3.2nm)。氮化钛氧化1h会使器件有效功函数降低0.05eV,但栅漏电流随之增加,对器件的可靠性产生不利影响。此外,采用物理气相沉积法制备钛铝要比使用原子层沉积法更有利于降低器件的有效功函数,可能与后者碳含量较高,铝扩散能力降低有关。This paper describes the ability of titanium nitride to regulate the effective work function and leakage current of devices under different film thicknesses,oxidation times,and top layer work function material preparation methods.As the thickness of the titanium nitride film increases,the rate of increase in the effective work function of the device gradually slows down,decreasing from 0.16 eVnm~(-1)(0~2.1nm) to 0.11eVnm~(-1)(2.1~3.2nm).Oxidation of titanium nitride for 1 hour can reduce the effective work function of the device by 0.05eV,but the gate leakage current increases accordingly,which has a negative impact on the reliability of the device.In addition,using physical vapor deposition method to prepare titanium aluminum is more conducive to reducing the effective work function of the device than using atomic layer deposition method,which may be related to the higher carbon content and reduced aluminum diffusion ability of the latter.

关 键 词：集成电路 功函数金属 有效功函数 氮化钛 钛铝 

分 类 号：TP405[自动化与计算机技术]