1200V碳化硅二极管制备及可靠性分析  

Analysis of Manufacturing and Reliability of 1 200V Silicon Carbide Diode

作　　者：杨承晋 刘勇强 刘涛 杨啸 YANG Chengjin;LIU Yongqiang;LIU Tao;YANG Xiao(Shenzhen SGKS Technology Co.,Ltd.,Guangdong,518000,China.)

机构地区：[1]深圳市森国科科技股份有限公司,广东518000

出　　处：《集成电路应用》2023年第11期4-5,共2页Application of IC

摘　　要：阐述设计并制备1 200V 10A碳化硅二极管,测试器件的静态参数和高温特性,对器件进行150℃80%BV常规高温反偏试验和175℃100%BV加严高温反偏试验,研究严苛条件下器件长期可靠性参数变化。测试结果显示所设计1 200V碳化硅二极管,常温静态反向击穿电压达到1 556V,正向导通电压为1.28V,在常规和加严高温反偏试验中均没有参数退化,显示出良好的长期可靠性。This paper expounds the design and preparation 1200V 10A silicon carbide diode to test the static parameters and high-temperature characteristics of the device,and conducts 150℃80%BV conventional high temperature reverse bias test and 175℃100%BV intensified high temperature reverse bias test on the device to study the long-term reliability parameter changes of the device under harsh conditions.The test results show that the designed 1200V silicon carbide diode has a static reverse breakdown voltage of 1600V at room temperature and a forward conduction voltage of 1.29V.There is no parameter degradation in both conventional and intensified high-temperature reverse bias tests,demonstrating good long-term reliability.

关 键 词：碳化硅器件 二极管 高温反偏试验 

分 类 号：TN311.7[电子电信—物理电子学]