一种应用于EEPROM的快速升压电荷泵设计  

A design of a fast-boost charge pump for EEPROM

作　　者：洪国华 卓启越 葛优 邹望辉 HONG Guohua;ZHUO Qiyue;GE You;ZOU Wanghui(School of Physics and Electronic Sciences,Changsha University of Science and Technology,Changsha410114,China)

机构地区：[1]长沙理工大学物理与电子科学学院,湖南长沙410114

出　　处：《电子元件与材料》2023年第11期1396-1401,共6页Electronic Components And Materials

基　　金：湖南省自然科学基金(2020JJ4627)。

摘　　要：设计了一种能快速升压的片上电荷泵电路。当电荷泵用于为EEPROM存储单元提供擦除及写入操作需要的高压时,其升压速度是重要的设计指标之一。研究发现,使用NPN晶体管代替传统Dickson电荷泵中的NMOS管组成升压链路后,能够提高电荷泵的升压速度和输出电压,且NPN晶体管能够用三阱CMOS工艺制作,不需要更复杂的BiCMOS工艺。基于0.18μm三阱CMOS工艺设计了电荷泵系统,包括时钟产生电路和12级采用NPN晶体管的Dickson电荷泵,其中时钟产生电路产生的两相不交叠时钟用于驱动电荷泵,避免电荷在泵电容间反向流通,同时增加预充管进一步提高升压速度。仿真结果显示,在5 V电源电压下,电荷泵的输出电压仅需2.06μs就能达到16 V,比传统的12级Dickson电荷泵快了2.51μs,实现了快速升压的目的。A fast-boost on-chip charge pump was designed.Here the voltage boost speed of a charge pump is one of the critical parameters for high voltage erasing and programming of the EEPROM memory unit.It is found that it can improve the boost speed and output voltage of the charge pump by using NPN transistor instead of NMOS transistor to form the voltage multiplier circuit in the traditional Dickson charge pump.The NPN transistors can be fabricated by triple well CMOS process,which can avoid the complex BiCMOS processes.A charge pump system was designed using 0.18μm triple well CMOS process,including a clock generator circuit and a 12-level Dickson charge pump based upon NPN transistors.The clock generator circuit produce a two-phase non-overlap clock signal to drive the charge pump to avoid reverse flow of charge between pump capacitances.Pre-charged transistors were added to further improve the boost speed.Simulation shows that,under 5 V power supply voltage,the output voltage of the charge pump can reach 16 V within 2.06μs,which is 2.51μs faster than the traditional 12-level Dickson charge pump.The design realizes the purpose of fast-boost speed of the charge pump.

关 键 词：电荷泵 NPN晶体管 快速升压 三阱CMOS工艺 EEPROM 

分 类 号：TN43[电子电信—微电子学与固体电子学]