非平衡磁控溅射W掺杂类金刚石薄膜的制备与性能研究  

Preparation and Properties of W-doped Diamond-like Carbon Films by Unbalanced Magnetron Sputtering

作　　者：林颖聪 梁爽 代伟[1] 林海天 王启民[1] LIN Yingcong;LIANG Shuang;DAI Wei;LIN Haitian;WANG Qimin(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China;Guangdong Huasheng Nanotechnology Co.,Ltd,Dongguan 523819,Guangdong,China)

机构地区：[1]广东工业大学机电工程学院,广州510006 [2]广东华升纳米科技股份有限公司,广东东莞523819

出　　处：《真空与低温》2024年第2期112-118,共7页Vacuum and Cryogenics

基　　金：广东省自然科学基金(2021A1515011921)。

摘　　要：为了研究W掺杂对类金刚石薄膜性能的影响,采用非平衡磁控溅射方法,通过改变WC靶功率,在YG6硬质合金基体上制备了5组不同W原子百分数(0%~14%)的含氢类金刚石薄膜(a-C:H:W)。用扫描电镜分析了薄膜的形貌,用拉曼光谱分析了薄膜的微观结构,分别用纳米压痕仪、划痕仪、摩擦磨损试验仪测试了薄膜的纳米硬度、膜基结合力和摩擦学性能。结果表明,a-C:H:W薄膜表面为丘状颗粒,随着WC靶功率的增加,颗粒尺寸先减小后增加;W掺杂可促进薄膜的石墨化;W原子百分数为4%的薄膜的临界划痕力Lc2值达到78.28 N,磨损率为5.8×10^(-8)mm^(3)/(N·m),摩擦因数为0.09。In order to study the effect of W doping on the properties of diamond-like carbon films,five groups of hydrogenated diamond-like carbon films(a-C:H:W)with different W atomic percentage(0%~14%)were prepared on YG6 cemented carbide substrate by unbalanced magnetron sputtering method by changing the power of WC target.The surface morphology of the film was analyzed by scanning electron microscopy.The microstructure of the films was analyzed by Raman spectroscopy.The nano-hardness,adhesion and tribological properties of the film were characterized by nanoindenter,scratch tester and tribometer.The results show that the surface of a-C:H:W film is mound particles,with the increase of WC target power,the particle size decreases first and then increases,the degree of graphitization of the film increases with the increase of the doping amount,the critical scratch force Lc2 value of the film with 4%W doping atom percentage reaches 78.28 N,the wear rate is 5.8×10^(-8)mm^(3)/N·m,and the friction coefficient is 0.09.

关 键 词：磁控溅射 DLC薄膜 元素掺杂 表面形貌 结合力 

分 类 号：TG174.444[金属学及工艺—金属表面处理]