硅衬底温度对电子束蒸发钛薄膜性能的影响  

Effect of silicon substrate temperature on properties of Ti films prepared by electron beam evaporation

作　　者：李兆营 李萌萌 Li Zhaoying;Li Mengmeng(Vital Optics Technology Co.,Ltd.,Chuzhou 239000,China)

机构地区：[1]安徽光智科技有限公司,安徽滁州239000

出　　处：《电镀与精饰》2024年第3期1-5,共5页Plating & Finishing

摘　　要：采用电子束蒸发法在硅衬底表面制备Ti薄膜。采用台阶仪、原子力显微镜、反射率测试仪、四探针电阻测试仪和应力测试仪分析了在不同衬底温度下所得Ti薄膜的厚度、表面粗糙度、镜面反射率、方块电阻和残余应力。结果表明,随着衬底温度从25℃升高到200℃,Ti薄膜的厚度、方块电阻和残余应力逐渐降低;表面粗糙度先减小后增大,镜面反射率则先升高后降低。Ti films were prepared on surface of silicon substrate by means of electron beam evapora‐tion.The thickness,surface roughness,specular reflectance,square resistance,and residual stress of Ti films obtained at different silicon substrate temperature were analyzed by step profiler,atomic force microscope,reflectivity tester,four probe resistance tester,and stress tester,respectively.The results showed that the thickness,square resistance,and residual stress of Ti films are decreased gradually with the increasing of silicon substrate temperature from 25℃to 200℃.The surface roughness de‐creases first and then increases while the specular reflectance increases first and then decreases with the increasing of silicon substrate temperature.

关 键 词：电子束蒸发 硅衬底温度 钛薄膜 方块电阻 残余应力 表面粗糙度 镜面反射率 

分 类 号：TN305.8[电子电信—物理电子学]