磨粒振动对碳化硅CMP的微观结构演变和材料去除的影响  

Effect of abrasive vibration on microstructure evolution and material removal of SiC CMP

作　　者：唐爱玲 苑泽伟[1] 唐美玲 王颖 TANG Ailing;YUAN Zewei;TANG Meiling;WANG Ying(School of Mechanical Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学机械工程学院,沈阳110870

出　　处：《金刚石与磨料磨具工程》2024年第1期109-122,共14页Diamond & Abrasives Engineering

摘　　要：针对化学机械抛光中磨料易团聚、机械和化学作用不能充分发挥等问题,采用振动辅助的方法进行优化。通过分子动力学模拟,分析磨粒振动的频率、振幅及其压入深度、划切速度对工件表面微观原子迁移的演变规律,揭示振动对材料去除和表面改善的促进机制;并通过振动辅助化学机械抛光工艺试验和表面成分分析,验证振动辅助的抛光效果和去除机制。结果表明:适当增大磨粒的振动频率、振动振幅及其压入深度、划切速度,可有效提高工件表面的原子势能和温度;磨粒振动有利于提高工件表面原子的混乱度,促进碳化硅参与氧化反应,形成氧化层并以机械方式去除;抛光试验和成分分析也证实振动可以提高材料去除率约50.5%,改善表面质量约25.4%。To address issues related to abrasion,agglomeration,and the challenges of mechanical and chemical release during chemical mechanical polishing(CMP),a vibration-assisted CMP method is employed.Molecular dynamics simulation analyze the dynamic evolution of frequency,amplitude,and indentation depth,along with the dicing speed of abrasive vibration on the workpiece's surface.It reveals the mechanism behind enhanced material removal and improved surface quality facilitated by vibration.The effectiveness and removal mechanism of vibration-assisted CMP are validated through process testing and surface composition analysis.The results show that atomic potential energy and temperature on the workpiece surface can be effectively improved by appropriately increasing vibration frequency,vibration amplitude,indentation depth,and abrasive particle cutting speed.Abrasive vibration contributes to increased atomic disorder on the workpiece surface,facilitating the participation of silicon carbide in oxidation reactions.This process results in the formation of an oxide layer,which is mechanically removed.Polishing tests and composition analyses also confirms that vibration can improve material removal rates by about 50.5%and improve the surface quality by about 25.4%.

关 键 词：碳化硅 振动 化学机械抛光 分子动力学 

分 类 号：TG74[金属学及工艺—刀具与模具] TG58TG175