碳化硅单晶加工对晶片表面质量的影响  

Effect of 4H-SiC Wafer Processing on Surface Quality

作　　者：张序清 刘晓双 张玺[1,2] 朱如忠 高煜 吴琛 王蓉[1,2] 杨德仁[1,2] 皮孝东 ZHANG Xuqing;LIU Xiaoshuang;ZHANG Xi;ZHU Ruzhong;GAO Yu;WU Chen;WANG Rong;YANG Deren;PI Xiaodong(State Key Laboratory of Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China;Institute of Advanced Semiconductors&Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices,Hangzhou Innovation Center,Zhejiang University,Hangzhou 311200,China;Department of Physics,Zhejiang University,Hangzhou 310027,China;Zhejiang Institute of Mechanical and Electrical Technology,Hangzhou 310053,China)

机构地区：[1]浙江大学硅及先进半导体材料全国重点实验室/材料科学与工程学院,浙江杭州310027 [2]浙江大学杭州国际科创中心先进半导体研究院/浙江省宽禁带功率半导体材料与器件重点实验室,浙江杭州311200 [3]浙江大学物理学院,浙江杭州310027 [4]浙江机电职业技术学院,浙江杭州310053

出　　处：《材料科学与工程学报》2024年第1期9-13,共5页Journal of Materials Science and Engineering

基　　金：浙江省“尖兵”“领雁”研发攻关计划资助项目(2022C01021);国家重点研发计划资助项目(2018YFB2200101);国家自然科学基金重大研究计划资助项目(91964107)。

摘　　要：碳化硅(4H-SiC)晶片加工是制备高品质衬底晶圆的关键工艺,衬底晶圆的表面质量直接影响外延薄膜以及后续器件的性能。本研究通过对4H-SiC晶片经线切割、磨削、研磨、抛光等不同加工工序后对应的表面形貌、粗糙度、机械性质和晶体质量的分析,发现晶片加工通过逐步去除线切割引入的表面损伤层,提高了晶片表面质量。4H-SiC晶片C面和Si面机械性质存在各向异性,C面材料韧性相对较差,加工过程中发生脆性断裂的程度更大,导致C面材料去除速率较快,表面形貌和粗糙度相对较差。4H-SiC wafer processing is a critical step for high-quality substrate wafers manufacture,which directly affects the performance of epitaxial films and the following devices.In this work,the properties including surface morphology,roughness,mechanical performance and crystal quality of 4H-SiC wafers processed by sawing,grinding,lapping and CMP have been investigated.It has been found that 4H-SiC wafer processing is beneficial to remove the surface damages and to improve the surface quality of wafers.The mechanical properties of the C-face and Si-face of 4H-SiC exhibit anisotropic.Due to the worse material toughness,brittle fracture is more intense during the C-face processing.Therefore,the material removal rate of the C-face is higher,and the surface morphology and roughness are relatively worse.

关 键 词：碳化硅 晶片加工 表面质量 各向异性 

分 类 号：TN304[电子电信—物理电子学]