IGBT结温与饱和压降耦合机理研究  

Study on coupling mechanism of IGBT junction temperature and saturation voltage drop

作　　者：厉孟 王俊炎 杜会卿 梁帅 Li Meng;Wang Junyan;Du Huiqing;Liang Shuai(The Fourth Navy Representative Office in Beijing,Beijing 100094,China;The Third Navy Representative Office in Wuhan,Wuhan 430070,China;China Shipbuilding Industry System Engineering Research Institute,Bejing 100094,China)

机构地区：[1]海装驻北京地区第四军事代表室,北京100094 [2]海装驻武汉地区第三军事代表室,武汉430070 [3]中国船舶集团有限公司系统工程研究院,北京100094

出　　处：《船电技术》2024年第3期23-26,共4页Marine Electric & Electronic Engineering

摘　　要：绝缘栅双极型晶体管(IGBT)结温是影响变流器系统寿命、评估其可靠性的重要参数,而集-射极饱和压降是实现结温在线监测的关键热敏电参数。为深入研究IGBT结温与集-射极饱和压降间的耦合关系,本文从物理结构层面构建了IGBT饱和压降温度特性模型,分析了不同电流面密度下饱和压降与结温的关系机理,通过搭建IGBT静态特性测试平台,进一步探究了饱和压降与结温之间存在近似线性关系,进而基于动态特性测试平台,验证了理论分析的正确性。实验结果表明,在一定集电极电流条件下,IGBT饱和压降与结温呈现近似线性关系。在此基础上,对IGBT结温在线监测方法提出了建议。Junction temperature of insulated gate bipolar transistor(IGBT)is an important parameter which affects the life of converter system and evaluates its reliability.And collector-emitter saturation voltage drop is the key thermal-sensitive parameter to realize on-line junction temperature monitoring.In order to study the relationship between IGBT junction temperature and saturation voltage drop,the temperature characteristic model of IGBT saturation voltage drop is constructed from the level of physical structure.Furthermore,the relationship mechanism between saturation voltage drop and junction temperature under different current surface densities is analyzed.Based on the IGBT static characteristic test platform,the approximate linear relationship between saturation voltage drop and junction temperature is explored,and the correctness of theoretical analysis is verified.The experimental results show that the relationship between saturation voltage drop and junction temperature of IGBT is approximately linear under certain collector current conditions.On this basis,this paper proposes some suggestions for IGBT junction temperature on-line monitoring.

关 键 词：IGBT 饱和压降 结温 特性测试 

分 类 号：TN322[电子电信—物理电子学]