含氮碱基缓蚀剂在铜研磨抛光后清洗液中的应用  

Application of Nitrogen-containing Heterocyclic Corrosion Inhibitor in PCMP Solution

作　　者：史筱超 马丽 王溯 SHI Xiaochao;MA Li;WANG Su(Shanghai Key Laboratory of IC Process Materials,Shanghai 201616,China;Shanghai Sinyang Semiconductor Materials Co.,Ltd.,Shanghai 201616,China)

机构地区：[1]上海市集成电路关键工艺材料重点实验室,上海201616 [2]上海新阳半导体材料股份有限公司,上海201616

出　　处：《集成电路应用》2024年第2期48-51,共4页Application of IC

摘　　要：阐述对比不同缓蚀剂配方对铜dummy片表面腐蚀抑制的影响,并辅助不同温度、时间、浓度下的不同缓蚀剂腐蚀速率,提出含有含氮碱基缓蚀剂配方的优势。对比不同缓释剂配方的清洗效果、表面粗糙度、对PVA清洗刷表面划伤的影响,进一步验证含有含氮碱基缓蚀剂配方的PCMP样品,在碱性条件下表现最佳。可将晶圆表面铜层清洗干净,且对铜表面腐蚀起到有效抑制作用,降低表面粗糙度,延长Q-Time时间。分析PCMP处理后的晶圆表面SP2和XPS表征,验证Cu_(2)O可以有效延长Q-time时间。This paper describes the effects of different corrosion inhibitor formulations on the surface corrosion inhibition of copper dummy,and assists in the comparative analysis of the corrosion rates of different inhibitors at different temperatures,times,and concentrations.It preliminarily proposes the advantages of formulations containing nitrogen based corrosion inhibitors.Secondly,compare the cleaning effects,surface roughness,and impact on the surface scratches of cleaning brushes PVA(polyvinyl alcohol material)with different sustained-release agent formulations,and further verify that PCMP samples containing nitrogen-containing base corrosion inhibitors exhibit the best performance under alkaline conditions.It can clean the copper layer on the surface of the wafer and effectively inhibit copper surface corrosion,reduce surface roughness,and extend the Q-Time(intermediate residence time in the process).Finally,the conclusion that Cu2O can effectively prolong the Q-time was brief verified through SP2 and XPS characterization analysis by the PCMP treated wafer surface.

关 键 词：集成电路制造 PCMP 缓蚀剂 腐蚀 晶圆清洗 

分 类 号：TN405[电子电信—微电子学与固体电子学]