FD-SOI器件中PMOS源漏区外延层形貌改善研究  

Study on Improving Morphology of Epitaxial Layer in Source Drain Region of PMOS in FD-SOI Devices

作　　者：方精训 吕健 FANG Jingxun;LYU Jian(Shanghai Huali Integrated Circuit Manufacturing Co.,Ltd.,Shanghai 201314,China.)

机构地区：[1]上海华力集成电路制造有限公司,上海201314

出　　处：《集成电路应用》2024年第2期60-62,共3页Application of IC

摘　　要：阐述FD-SOI器件中SiGe-RSD形貌不规则是导致Si Cap层被金属扎穿的原因。针对这一问题,对SiGe-RSD的制备工艺进行逐层(L1/L2/L3)优化,最终制备出形貌规则、表面平整的样品。随后的接触通孔工艺环节Si Cap层未被扎穿,形成良好的合金,器件PMOSFET的性能也得到明显提升。This paper expounds that the irregular morphology of SiGe RSD in FD-SOI devices is the reason for the metal piercing of the Si Cap layer.To address this issue,the preparation process of SiGe RSD was optimized layer by layer(L1/L2/L3),resulting in the preparation of samples with regular morphology and smooth surface.The subsequent contact through-hole process did not puncture the Si Cap layer,forming a good alloy,and the performance of the device PMOSFET was significantly improved.

关 键 词：集成电路制造 FD-SOI 外延 凸起源漏结构 

分 类 号：TN405[电子电信—微电子学与固体电子学]