硅基钽酸锂异质晶圆键合工艺研究  

Study on Bonding Technology of Silicon-Based Lithium Tantalate Heterogeneous Wafers

作　　者：陈哲明 丁雨憧[1] 邹少红 龙勇[1] 石自彬[1] 马晋毅[1] CHEN Zheming;DING Yuchong;ZOU Shaohong;LONG Yong;SHI Zibin;MA Jinyi(th Institute of China Electronics Technology Group Corporation,Chongqing 400060,China)

机构地区：[1]中国电子科技集团公司第二十六研究所,重庆400060

出　　处：《人工晶体学报》2024年第4期634-640,共7页Journal of Synthetic Crystals

基　　金：科工局项目(JPPT-XX)。

摘　　要：5G移动通信的发展对声表面波滤波器提出了高频、小型化、集成化的要求。相较于传统压电体单晶材料,采用硅基压电单晶薄膜材料制备的声表面波滤波器具有高频、低插入损耗、高温稳定性等优势,是高性能声表面波器件发展的核心基础材料。Smart-Cut^(TM)是制备硅基压电单晶薄膜材料的主要方法,键合工艺是其中的核心工序,键合质量决定了硅基压电单晶薄膜晶圆材料的质量,并影响器件性能。本文通过低温直接键合工艺,对等离子活化、兆声清洗、预键合、键合加固四道工序展开优化,最终实现了键合强度高达1.84 J/m^(2)、键合面积超过99.9%的高质量硅基钽酸锂异质晶圆键合。The development of 5G mobile communication imposes requirements of high frequency,miniaturization,and integration on surface acoustic wave devices.Compared with traditional piezoelectric bulk single crystal material,surface acoustic wave filters fabricated with silicon-based piezoelectric single crystal film materials exhibit advantages such as high frequency,low insertion loss,high temperature stability and so on,making silicon-based piezoelectric single crystal film material prime foundation material.Smart-Cut TM is the universal method for preparing silicon-based piezoelectric single crystal film materials,and bonding process is one of the most essential procedures.Bonding quality determines the quality of piezoelectric single crystal film and ultimately affects the performance of the devices.In this work,high-quality heterogeneous silicon-based LiTaO_(3) wafers with the bonding strength up to 1.84 J/m^(2) and bonding area over 99.9% were achieved through optimizing low-temperature direct bonding process,which includes plasma activation,megasonic cleaning,pre-bonding,and thermal treatment.

关 键 词：硅基钽酸锂 低温直接键合 等离子活化 兆声清洗 预键合 键合加固 声表面波滤波器 

分 类 号：TN384[电子电信—物理电子学] TM22[一般工业技术—材料科学与工程] TN713[电气工程—电工理论与新技术]