基于SiC肖特基二极管温度特性的研究  

Study on temperature characteristics of SiC Schottky Diodes

作　　者：李金钊 LI Jinzhao(School of Electrical&Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore)

机构地区：[1]新加坡南洋理工大学电子与电气工程学院,新加坡639798

出　　处：《电子设计工程》2024年第8期32-35,40,共5页Electronic Design Engineering

摘　　要：碳化硅(SiC)作为第三代宽带隙半导体材料,其因优异的物理特性而被广泛研究。针对SiC器件在高温环境下可能会因为不理想的散热导致器件失效从而引发可靠性问题,文中采用仿真的方法对铂Pt/SiC肖特基二极管器件进行了测试,并研究了该型器件在高温下的伏安特性。结果表明,Pt/SiC肖特基二极管器件在正偏的情况下,随着温度的升高,器件的电流水平会逐渐降低;器件反偏时,反向电流水平则随着温度的升高而急剧增大。同时在高温下器件的反向电流基本趋于饱和,热电子发射电流占据主导地位,且200℃时电子的迁移率仅为500 cm2/(V·s)。Silicon carbide(SiC),as the third generation wide band gap semiconductor material,has been widely studied because of its excellent physical properties.In view of the reliability problem caused by the failure of SiC devices due to imperfect heat dissipation under high temperature environment,this paper adopts the simulation method to test the Pt/SiC Schottky Diode devices,and studies the volt ampere characteristics of this type of devices under high temperature.The results show that under the condition of positive bias,the current level of Pt/SiC Schottky Diode will gradually decrease with the increase of temperature;When the device is reverse biased,the reverse current level increases sharply with the increase of temperature;At high temperature,the reverse current of the device tends to be saturated,and the hot electron emission current dominates.At 200 ℃,the electron mobility is only 500 cm2/(V·s).

关 键 词：碳化硅 肖特基势垒二极管 温度特性 开启电压 电子迁移率 

分 类 号：TN311[电子电信—物理电子学]