干式抛光在减薄加工中的工艺研究  

Research on Dry Polishing Technology in Grinding Application Process

作　　者：孙莉莉 衣忠波[1] 王刚[1] SUN Lili;YI Zhongbo;WANG Gang(The 45^(th) Research Institute of CETC,Beijing 100176,China)

机构地区：[1]中国电子科技集团公司第四十五研究所,北京100176

出　　处：《电子工业专用设备》2024年第2期8-11,共4页Equipment for Electronic Products Manufacturing

摘　　要：介绍了干式抛光的工艺过程和原理,主要研究了干式抛光工艺过程中抛光压力、抛光位置、抛光时间对晶片表面粗糙度的影响。提出减小晶片表面粗糙度的工艺措施,为减少后续抛光工序的抛光时间提供指导。The process and principle of dry polishing are introduced in this paper,and mainly studies the influence of polishing pressure,polishing position and polishing time on the surface roughness of wafer.The technological measures to reduce the surface roughness of wafer are put forward to provide guidance for reducing the polishing time of subsequent polishing process.

关 键 词：干式抛光 粗糙度 工艺研究 

分 类 号：TN305.2[电子电信—物理电子学]