界面工程调控石墨烯/氮化镓紫外光电探测性能研究(特邀)  

Study on the Performance of Graphene/GaN Ultraviolet Photodetectors Regulated Through Interface Engineering(Invited)

作　　者：高芳亮 陈坤[1] 刘青[1] 王幸福[1] 杨纪锐 徐明俊 贺宇浩 石宇豪 许腾文 阳志超 李述体[1] Gao Fangliang;Chen Kun;Liu Qing;Wang Xingfu;Yang Jirui;Xu Mingjun;He Yuhao;Shi Yuhao;Xu Tengwen;Yang Zhichao;Li Shuti(School of Semiconductor Science and Technology,South China Normal University,Guangzhou 510631,Guangdong,China;Dongguan South Semiconductor Technology Co.,Ltd.,Dongguan 523781,Guangdong,China)

机构地区：[1]华南师范大学半导体科学与技术学院,广东广州510631 [2]东莞南方半导体科技有限公司,广东东莞523781

出　　处：《激光与光电子学进展》2024年第3期1-6,共6页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(62375090,62374062,12374072)。

摘　　要：界面工程是提高光电探测器性能的有效方法之一。报道了基于界面工程调控的石墨烯(Gr,2D)/GaN(3D)范德瓦耳斯异质结紫外光电探测器。GaN吸收光子产生电子空穴对,并在内建电场作用下发生分离。其中,光生空穴利用隧穿效应向Gr一侧迁移,而光生电子向GaN一侧迁移。在较高的电场驱动下,载流子将发生碰撞,造成光电流倍增,使得器件的光吸收效率与光电转化效率有明显提升。因此,器件在-2 V偏压条件和5μW/cm^(2)紫外光照射下,展示出较高的响应度(395.2 A/W)和较大的探测率(4.425×10^(15)Jones)值。该研究丰富了界面工程技术在Gr基紫外光电探测器的应用,为制备高性能紫外探测器提供了可能。Interface engineering stands out as an effective method for enhancing the performance of photodetectors.This study presents ultraviolet(UV)photodetectors featuring a Gr(2D)/GaN(3D)van der Waals heterojunction,skillfully regulated through interface engineering control.The GaN film efficiently absorbs photons,generating electron-hole pairs promptly separated by the built-in electric field.Photogenerated holes traverse to the Gr side through the tunneling effect,while photogenerated electrons move towards the GaN side.At elevated built-in field levels,high-speed photogenerated carriers undergo impact ionization,leading to a multiplication of the photocurrent.The outcomes highlight the significant influence of lead sulfide quantum dots(PbS QDs)on the light absorption efficiency and photoelectric conversion efficiency of the device.Consequently,the device achieves a remarkable responsivity value of 395.2 A/W and a substantial detectivity value of 4.425×10^(15) Jones under 5μW/cm^(2) light at−2 V.This research contributes to the application of interface engineering technology in Grbased UV photodetectors,opening possibilities for the preparation of high-performance UV detectors.

关 键 词：氮化镓 二维/三维 金属有机化学气相沉积 紫外探测器 

分 类 号：O436[机械工程—光学工程]