β-Ga_(2)O_(3)的p型掺杂研究进展  

Research Progress of p-type Doping of β-Ga_(2)O_(3)

作　　者：何俊洁 矫淑杰[1] 聂伊尹 高世勇[1] 王东博[1] 王金忠[1] HE Junjie;JIAO Shujie;NIE Yiyin;GAO Shiyong;WANG Dongbo;WANG Jinzhong(School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《发光学报》2024年第4期557-567,共11页Chinese Journal of Luminescence

基　　金：国家自然科学基金(62174042);国家重点研发项目(2019YFA0705201)。

摘　　要：β-Ga_(2)O_(3)具有超宽禁带宽度、高击穿场强、较高的巴利加优值等优点使其成为一种新兴半导体材料,在高功率电子器件、气体传感器、日盲紫外探测器等方面有着极大的应用潜力,但p型掺杂难的问题成为了β-Ga_(2)O_(3)发展的巨大障碍。本文首先简要概述了β-Ga_(2)O_(3)的优点,并介绍了其晶体结构和基本性质。其次,说明了β-Ga_(2)O_(3)的本征缺陷,尤其是氧空位对导电性能的影响。然后,详细讨论了β-Ga_(2)O_(3) p型掺杂的研究现状,包括p型掺杂困难的原因和N掺杂、Mg掺杂、Zn掺杂、其他受主元素掺杂、两种元素共掺杂以及其他方法。最后,总结并对β-Ga_(2)O_(3)未来的发展进行了展望。β-Ga_(2)O_(3) has many advantages such as wide bandgap,high breakdown field strength,and high Baliga's figure of merit,making it an emerging semiconductor material with great potential for high-power electronic devices,gas sensors,and solar-blind ultraviolet detectors.However,the challenge of achieving p-type doping poses a major obstacle to the development of β-Ga_(2)O_(3).Firstly,the advantages of β-Ga_(2)O_(3) have been outlined briefly,and its structure and basic properties have been introduced as well.Secondly,the effect of the intrinsic defects of β-Ga_(2)O_(3) on electrical conductivity has been discussed detailed,especially,for the oxygen vacancy.And then,the current research status of p-type doping in β-Ga_(2)O_(3) has been discussed including N,Mg,Zn and other acceptor elements doping,co-doping with two elements and other methods.Additionally,the reasons for difficulty in p-type doping have been presented.Finally,this review discussed and looked forward to future developments for β-Ga_(2)O_(3).

关 键 词：β-Ga_(2)O_(3) 本征缺陷 P型掺杂 宽禁带半导体 半导体 

分 类 号：O482.31[理学—固体物理]