1.5μm高功率超辐射发光二极管的制备和性能  

Preparation and Performance of 1.5μm High-power Superluminescent Diodes

作　　者：薛正群 王凌华 陈玉萍 XUE Zhengqun;WANG Linghua;CHEN Yuping(School of Advanced Manufacturing,Fuzhou University,Quanzhou 362251,China;School of Physical and Information Engineering,Fuzhou University,Fuzhou 350116,China;Xiamen Xinnuo Communication Technology CO.,Ltd.,Xiamen 361011,China)

机构地区：[1]福州大学先进制造学院,福建泉州362251 [2]福州大学物理与信息工程学院,福建福州350116 [3]厦门市芯诺通讯科技有限公司,福建厦门361011

出　　处：《发光学报》2024年第4期644-650,共7页Chinese Journal of Luminescence

基　　金：福建省科技计划(2021H4016);泉州市科技计划(2021G13);福建省雏鹰计划青年拔尖人才项目(2022173)。

摘　　要：超辐射发光二极管作为光纤陀螺的核心元件,其性能直接影响光纤陀螺的精度;其中超辐射发光二极管出光功率越高,光纤陀螺接收信号信噪比越好。InP/AlGaInAs增益材料具有电子限制效率高的优点,然而由于Al元素容易氧化,面临一定的应用可靠性问题。本文采用InP/InGaAsP作为增益材料,通过在外延结构上采用宽带隙电子阻挡层来提高量子阱的电子限制效率。试验结果表明,激光芯片最大出光功率从69 mW提升至92 mW。在此基础上,通过优化材料沉积速率改善增益区和应变电子阻挡层材料质量。结果显示,激光芯片可靠性得到较为明显改善,经过1000 h寿命老化,样品阈值和功率变化率在合格范围之内。最后,进行超辐射发光二极管芯片制备。测试表明,电子阻挡层使得室温下SLD芯片饱和出光功率从19 mW提高至24 mW,饱和工作电流也有所提高,光谱宽度达到80 nm,光谱中心波长在1500 nm附近;芯片1000 h寿命老化阈值和光功率变化稳定,未出现性能退化样品。As the core component of fiber optic gyroscopes(FOG),the performance of the superluminescent diodes directly affects the accuracy of the FOG.The higher the output power of the superluminescent diodes,the better the signal-to-noise ratio received by the gyroscope.InP/AlGaInAs have the advantage of high electron confinement efficiency.However,due to the problem of Al oxidation,they pose certain risks in terms of application reliability.In this paper,the InP/InGaAsP are used as gain materials,and the electron confinement efficiency of the quantum wells is improved by adopting the broad bandgap InGaAsP electron blocking layer in the epi-structure.Experimental results show that the electron blocking layer increases the maximum output power of the laser diode from 69 mW to 92 mW.Furthermore,by optimizing the material growth rate to improve the quality of both the active region and the strained electron blocking layer,it is observed that the reliability of the laser diode is significantly improved after aging for 1000 h,with threshold and power variation falling within acceptable ranges.Finally,superluminescent diode(SLD)chips were fabricated,and the tested results showed that the electron blocking layer increased the saturated output power of SLD chips from 19 mW to 24 mW at room temperature.The saturated operating current of SLD also increased,with a spectral width of 80 nm and a center wavelength of 1500 nm.Furthermore,after aging for 1000 h,the threshold and power of SLD remained stable without performance degradation.

关 键 词：超辐射发光二极管 InP/InGaAsP 电子阻挡结构 材料生长速率 

分 类 号：TN312.8[电子电信—物理电子学] O472[理学—半导体物理]