铜互连新型阻挡层材料的研究进展  

Research Progress on Advanced Barrier Layer for Cu Interconnects

作　　者：张学峰 邓斌 张庆山 ZHANG Xuefeng;DENG Bin;ZHANG Qingshan(Beijing NAURA Microelectronics Equipment Co.,Ltd.,Beijing 100176,P.R.China)

机构地区：[1]北京北方华创微电子装备有限公司,北京100176

出　　处：《微电子学》2024年第1期17-24,共8页Microelectronics

摘　　要：铜互连阻挡层材料起到防止铜与介质材料发生扩散的重要作用。因此,阻挡层材料需要满足高稳定性、与铜和介质材料良好的粘附性以及较低的电阻。自1990年代以来,氮化钽/钽(TaN/Ta)作为铜的阻挡层和衬垫层得到了广泛的应用。然而,随着晶体管尺寸微缩,互连延时对芯片速度的影响越来越重要。由于TaN/Ta的电阻率高且无法直接电镀铜,已经逐渐难以满足需求。文章综述了铜互连阻挡层材料的最新进展,包括铂族金属基材料、自组装单分子层、二维材料和高熵合金,以期对金属互连技术的发展提供帮助。The barrier layer of copper interconnects plays a crucial role in preventing diffusion between copper and dielectric materials.These barrier materials must meet specific requirements,including high stability,strong adhesion to copper and dielectric materials,and low resistance.Since the 1990s,tantalum nitride/tantalum(TaN/Ta)has been commonly used as copper barrier layers and liner layers.However,as continuous developments in integrated chip scaling occur,the impact of interconnect delay on chip speed has become increasingly significant.The high resistivity and inability of TaN/Ta to electroplate directly the copper have made it challenge to meet the evolving demands.In this paper,the recent advancements in copper interconnect barrier materials,including metal alloys,self-assembled molecular layers(SAM),two-dimensional materials and high-entropy alloys,were reviewed.Additionally,this paper highlighted the challenges and suggest future research directions.

关 键 词：铜互连 阻挡层 后端互连工艺 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]