等离子体增强型ZnO基纳米线异质结阵列光电探测器  

Plasmon-enhanced ZnO-based nanowire heterojunction array photodetector

作　　者：吴茴 彭嘉隆 江金豹 李晗升 徐威 郭楚才 张检发 朱志宏[1] Wu Hui;Peng Jialong;Jiang Jinbao;Li Hansheng;Xu Wei;Guo Chucai;Zhang Jianfa;Zhu Zhihong(College of Advanced Interdisciplinary Studies&Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]国防科技大学前沿交叉学科学院新型纳米光电信息材料与器件湖南省重点实验室,湖南长沙410073

出　　处：《红外与激光工程》2024年第3期184-192,共9页Infrared and Laser Engineering

基　　金：国家自然科学基金项目(62105369)。

摘　　要：低维ZnO基光电探测器具有高响应性和高光子吸收能力。然而,ZnO较窄的吸收范围以及较低的光生载流子寿命限制了低维ZnO材料在光电子学中的潜在应用。该研究展示了一种零维(0D)金属纳米等离子体增强氧化锌纳米线(ZnO)-硒化锌(ZnSe)异质结阵列的新型光电探测器。与基于单纯ZnO纳米线阵列的探测器件比较表明,该探测器具有优异的光电响应性能。在可见光作用下,该器件的响应度和平均上升(下降)时间分别为1.7 mA/W和1.812 ms(1.803 ms),在10 h连续测试中表现出优异的稳定性,为开发高性能光电探测器提供了一种低成本、可规模化的方法,有望在可穿戴设备、光通信系统、环境传感器等多方面得到应用。Objective Low-dimensional ZnO-based photodetectors have high responsivity and high photon absorption ability.However,the limited absorption range and reduced carrier lifetime of ZnO constrain its potential applications in optoelectronics.This study presents a novel plasmon-enhanced photodetector with zinc oxide(ZnO)nanowires-zinc selenide(ZnSe)heterojunction arrays.Methods One-dimensional(1D)ZnO nanowires with ZnSe shell heterostructures were synthesized on FTO substrate using low-temperature hydrothermal and chemical vapor deposition methods.Subsequently,silver nanoparticles were uniformly deposited on the heterojunction through capillary self-assembly,resulting in a plasmon-enhanced heterojunction array photodetector(Fig.1).The built-in electric field within the heterostructure accelerates the effective separation of photogenerated electrons and holes,thereby promoting the charge carrier transport characteristics of the optoelectronic device.Leveraging the surface plasmon resonance effect,noble metal nanoparticles exhibit excellent localized field enhancement,effectively enhancing the material's light absorption.Material morphology,structure,and chemical composition were characterized through scanning electron microscopy(SEM),transmission electron microscopy(TEM),X-ray spectroscopy(XRD),and Raman spectroscopy analyses.The photovoltaic characteristics of the detector were systematically analyzed using standard techniques such as the chopped light voltammetry method,optoelectronic transient response measurement,and time-current curves.Results and Discussions Under visible light irradiation,the photoresponsivity of the Ag nanoparticle-enhanced ZnO/ZnSe heterojunction nanowire array photodetector far exceeds that of the ZnO/ZnSe heterojunction nanowire array photodetector and the ZnO nanowire array photodetector,reaching a maximum of 2.8 mA/W(Fig.3).At a bias voltage of 0.8 V and under visible light irradiation at 100 mW/cm^(2),the responsivity of the Ag nanoparticleenhanced ZnO/ZnSe heterojunction nanowire array p

关 键 词：等离子体增强 ZNO纳米线 纳米线异质结 光电探测器 

分 类 号：O472.8[理学—半导体物理]