高压FRD少子寿命控制技术研究  

Research on High Voltage FRD Minority Lifetime Control Techniques

作　　者：艾治州 李松岭 张帮会 王二俊 张小辛 AI Zhizhou;LI Songling;ZHANG Banghui;WANG Erjun;ZHANG Xiaoxin(China Resources Microelectronics(Chongqing)Limited,Chongqing,400000,CHN)

机构地区：[1]华润微电子(重庆)有限公司,重庆400000

出　　处：《固体电子学研究与进展》2024年第2期173-177,共5页Research & Progress of SSE

摘　　要：快恢复二极管(Fast recovery diode,FRD)常采用寿命控制技术来减小反向恢复时间,但也会改变其他电学性能。本文研究了扩铂工艺、电子辐照工艺以及结合扩铂和电子辐照工艺对1 700 V FRD的导通压降温度特性、反向恢复特性以及反向漏电流的影响。实验结果表面:采用扩铂与电子辐照工艺后,FRD的导通压降分别呈现出负温度系数与正温度系数;结合两种工艺后,FRD的导通压降趋于零温度系数。此外,在导通压降近似为2 V时,扩铂后FRD的反向峰值电流为21.3 A,且反向漏电流最小;电子辐照后FRD的反向峰值电流为35.2 A,且反向漏电流最大;结合两种工艺后,发现反向漏电流介于两者之间,反向峰值电流为25.9 A,同时获得了较小的反向恢复电荷,大小为4148.9 nC。Fast recovery diode often uses lifetime control techniques to reduce the reverse recov-ery time,while also changing other electrical properties.In this paper,the effects of platinum diffusion process,electron irradiation process,and combined platinum diffusion and electron irradiation process-es on the on-state voltage drop temperature characteristics,reverse recovery characteristic,and re-verse leakage current of 1700 V FRD were investigated.The experimental results show that the FRD on-state voltage drop exhibits negative and positive temperature coefficients after using the platinum diffusion and electron irradiation processes,respectively;the on-state voltage drop of the FRD tends to zero temperature coefficient after combining the two processes.In addition,the reverse peak current of the FRD after platinum expansion is 21.3 A and its reverse leakage current is the smallest when the on-state voltage drop is approximated to be 2 V;the reverse peak current of the FRD after electron ir-radiation is 35.2 A and its reverse leakage current is the largest;after combining the two processes,it is found that the reverse leakage current is between the two,and the peak reverse current is 25.9 A,while a smaller reverse recovery charge of 4148.9 nC is obtained.

关 键 词：快恢复二极管 扩铂 电子辐照 温度系数 导通压降 

分 类 号：TN31[电子电信—物理电子学]