基于BSIM⁃CMG紧凑模型的NSFET直流特性建模  

Modeling of NSFET DC Characteristics Based on BSIM⁃CMG Compact Model

作　　者：陈光前 王悦杨 唐敏 刘伟景 Chen Guangqian;Wang Yueyang;Tang Min;Liu Weijing(College of Electronics and Information Engineering,Shanghai University of Electric Power,Shanghai 200090,China;Semiconductor Manufacturing International Corporation,Shanghai 310000,China)

机构地区：[1]上海电力大学电子与信息工程学院,上海200090 [2]中芯国际集成电路制造有限公司,上海310000

出　　处：《半导体技术》2024年第5期442-448,共7页Semiconductor Technology

基　　金：国家自然科学基金(62174055)。

摘　　要：随着半导体制造工艺技术的发展,纳米片场效应晶体管(NSFET)成为下一代集成电路的核心器件,建立能准确描述NSFET特性的SPICE模型对提高基于NSFET的集成电路设计的成功率和缩短先进工艺的开发周期至关重要。结合Sentaurus TCAD仿真与伯克利短沟道绝缘栅场效应晶体管公共多栅(BSIM⁃CMG)紧凑模型,对NSFET进行直流特性建模。使用器件模型提取工具XModel提取器件的直流特性参数,包括单器件参数提取、温度及自热效应参数提取。结果表明,单器件直流特性参数提取平均误差小于5%,温度及自热效应的参数提取结果精准度较好,验证了模型的准确性。最后,构建并验证分组模型与工艺角模型。这些模型能准确描述不同尺寸和工艺波动对NSFET器件特性的影响,为加快高性能、低功耗NSFET的开发提供理论参考和实践指导。With the development of semiconductor manufacturing technology,the nanosheet field⁃effect transistor(NSFET)has become the core device of the next generation integrated circuit.The establishment of a SPICE model that can accurately depict the characteristics of NSFETs is crucial for en⁃hancing the success rate of NSFET⁃based integrated circuit designs and shortening the development cycle of advanced processes.Combining Sentaurus TCAD simulation and the Berkeley short⁃channel insulated gate field⁃effect transistor(IGFET)model⁃common multi⁃gate(BSIM⁃CMG)compact model,the DC characteristics of NSFETs were modeled.The device model extraction tool XModel was utilized to extract DC characteristic parameters of the device,including the extraction of single device parameters,as well as temperature and self⁃heating effect parameters.The results show that the average error in the extraction of DC characteristic parameters from single devices is less than 5%,and the precision of parameters extraction for temperature and self⁃heating effects is relatively high,verifying the accuracy of the model.Finally,the bin and corner models were constructed and verified.The constructed models are capable of accurately describing the impacts of different sizes and process fluctuations on NSFET device characteris⁃tics,providing reference basis and practical guidance for accelerating the development of high⁃performance low⁃power NSFETs.

关 键 词：纳米片场效应晶体管(NSFET) TCAD 伯克利短沟道绝缘栅场效应晶体管公共多栅(BSIM⁃CMG)紧凑模型 直流特性 参数提取 

分 类 号：TN386[电子电信—物理电子学]