中国电科11所碲镉汞薄膜材料制备技术进展  

Progress of HgCdTe materials in 11th Research Institute of CETC

作　　者：折伟林[1] 邢晓帅 邢伟荣[1] 刘江高 郝斐 杨海燕 王丹 侯晓敏[1] 李振兴 王成刚[1] SHE Wei-lin;XING Xiao-shuai;XING Wei-rong;LIU Jiang-gao;HAO Fei;YANG Hai-yan;WANG Dan;HOU Xiao-min;LI Zhen-xing;WANG Cheng-gang(The 11th Research Institute of CETC,Beijing 100015,China)

机构地区：[1]中国电子科技集团公司第十一研究所,北京100015

出　　处：《激光与红外》2024年第4期483-494,共12页Laser & Infrared

摘　　要：碲镉汞材料具有响应速度快、量子效率高、带隙连续可调等优点,广泛应用于红外探测领域,本文报道了近年来中国电科11所在碲镉汞薄膜材料制备方面的技术进展。在碲锌镉衬底材料制备方面,已突破Φ135mm碲锌镉晶体生长技术,碲锌镉衬底平均位错腐蚀坑密度(EPD)<1×10^(4)cm^(-2),具备了80mm×80mm规格碲锌镉衬底的批量生产能力。在液相外延碲镉汞薄膜制备方面,富碲水平液相外延碲镉汞薄膜平均位错腐蚀坑密度EPD<4×10^(4)cm^(-2),具备80mm×80mm规格碲镉汞薄膜的制备能力;富汞垂直液相外延实现高质量双层异质结碲镉汞薄膜材料批量化制备,该种材料的半峰宽(FWHM)控制在(20~40)arcsec范围内,碲镉汞薄膜厚度极差≤±06μm。在分子束外延碲镉汞薄膜方面,实现了6 in硅基碲镉汞材料制备,组分标准偏差≤00015,表面宏观缺陷密度≤100cm^(-2);碲锌镉基碲镉汞材料已具备50mm×50mm制备能力,组分标准偏差为0002,厚度标准偏差为0047μm。从探测器验证结果来看,基于富碲水平液相外延碲镉汞薄膜实现了1 k×1 k、2 k×2 k等规格红外焦平面探测器的工程化制备;采用双层异质结碲镉汞薄膜实现了高温工作、长波及甚长波探测器的制备;使用分子束外延制备的碲镉汞薄膜实现了27 k×27 k、54 k×54 k、8 k×8 k等规格红外焦平面探测器研制,在宇航领域有巨大的应用潜力。HgCdTe materials have the advantages of fast response,high quantum efficiency,and continuously adjustable bandgap,and are widely used in the field of infrared detection.In this paper,the recent progress of the 11th Research Institute of CETC in the preparation of HgCdTe materials is reported.In the preparation of CdZnTe substrate materials,a breakthrough has been made in the crystal growth technology of Φ135mm CdZnTe,and the average etch pit density(EPD)of CdZnTe substrate less than 1×10^(4)cm^(-2),and has the mass production capacity of 80mm×80mm CdZnTe substrate.In terms of the preparation of HgCdTe films in liquid phase epitaxy,the average etch pit density(EPD)of tellurium rich horizontal liquid epitaxial HgCdTe films is less than 4×10^(4)cm^(-2),and it has the ability to prepare 80mm×80mm HgCdTe,and the mercury rich vertical liquid phase epitaxy realizes the batch preparation of high quality double layer heterojunction materials,and FWHM of heterojunction materials is controlled in the range of 20~40 arcsec,and the thickness homogeneity of HgCdTe films is better than△d=±0.6μm.In the molecular beam epitaxial HgCdTe film,the preparation of 6 inch Si based HgCdTe material with a component standard deviation better than 0.0015 and a surface macroscopic defect density less than 100cm^(-2),and the CdZnTe based HgCdTe has a preparation capacity of 50mm×50mm,with a standard deviation of 0.002 and a thickness standard deviation of 0.047μm.According to the verification results of the detectors,the engineering preparation of infrared focal plane detectors of 1 k×1 k,2 k×2 k and other specifications based on the liquid phase epitaxial HgCdTe at the tellurium rich level has been realized,the preparation of high temperature working,long wave and very long wave detectors has been realized by using double layer heterojunction materials,and the development of infrared focal plane detectors of 2.7 k×2.7 k,5.4 k×5.4 k,8 k×8 k and other specifications has been realized by using HgCdTe films prepared by molecular

关 键 词：碲锌镉 碲镉汞 双层异质结 红外探测 液相外延 分子束外延 

分 类 号：TN213[电子电信—物理电子学] O484[理学—固体物理]