高迁移率金属氧化物半导体薄膜晶体管的研究进展  

Research progress of high mobility metal oxide semiconductor thin film transistors

作　　者：李强 葛春桥 陈露 钟威平 梁齐莹 柳春锡 丁金铎 LI Qiang;GE Chunqiao;CHEN Lu;ZHONG Weiping;LIANG Qiying;LIU Chunxi;DING Jinduo(Zhongshan Zhilong New Material Technology Co.Ltd.,Zhongshan 528459,China)

机构地区：[1]中山智隆新材料科技有限公司,广东中山528459

出　　处：《液晶与显示》2024年第4期447-465,共19页Chinese Journal of Liquid Crystals and Displays

基　　金：中山市科技计划(No.LJ2021006,No.CXTD2022005,No.2022A1009)。

摘　　要：基于金属氧化物半导体(MOS)的薄膜晶体管(TFT)由于较高的场效应迁移率(μFE)、极低的关断漏电流和大面积电性均匀等特点,已成为助推平板显示或柔性显示产业发展的一项关键技术。经过30余年的研究,非晶铟镓锌氧化物(a-IGZO)率先替代非晶硅(a-Si)在TFT中得到推广应用。然而,为了同时满足显示产业对更高生产效益、更佳显示性能(如高分辨率、高刷新率等)和更低功耗等多元升级要求,需要迁移率更高的MOS TFTs技术。本文从固体物理学的角度,系统综述了MOS TFTs通过多元MOS材料实现高迁移率特性的研究进展,并讨论了迁移率与器件稳定性之间的关系。最后,总结展望了MOS TFTs的现状和发展趋势。Thin-film transistor(TFT)based on metal oxide semiconductor(MOS)has become a key technology to boost the development of the flat panel display or flexible display industry due to their high field-effect mobility(μFE),extremely low cut-off leakage current and good large-area electrical uniformity.After more than 30 years of research,amorphous indium gallium zinc oxide(a-IGZO)is the first to be popularized in TFT by replacing the amorphous silicon(a-Si).However,in order to simultaneously meet the multiple upgrade requirements of the display industry for higher productivity,better display performance(such as high resolution,high refresh rate,etc.)and lower power consumption,MOS TFTs technology with higher mobility is required.From the perspective of solid-state physics,this paper reviews the research progress of MOS TFTs to achieve high mobility characteristics through multi-component MOS materials,and discusses the relationship between mobility and device stability.Finally,the status quo and development trend of MOS TFTs are summarized and prospected.

关 键 词：金属氧化物半导体 薄膜晶体管 场效应迁移率 偏压稳定性 

分 类 号：TN321.5[电子电信—物理电子学]