基于SiGe工艺多抽头电感结构的紧凑型Wilkinson功分器  

A multi-tap inductor compact Wilkinson power divider based on SiGe technology

作　　者：张斌 秦战明 孙文俊 蒋颖丹[1] 汪柏康 张礼怿 ZHANG Bin;QIN Zhanming;SUN Wenjun;JIANG Yingdan;WANG Baikang;ZHANG Liyi(China Electronics Technology Group Corporation No.58 Research Institute,Wuxi 214035,China)

机构地区：[1]中国电子科技集团第五十八研究所,江苏无锡214035

出　　处：《现代电子技术》2024年第10期13-17,共5页Modern Electronics Technique

摘　　要：为了解决传统Wilkinson功分器损耗高、尺寸大的问题,从功分器的理论分析出发,将传统的微带线结构和LC集总式结构进行改进,在隔离电阻处引入频率补偿电容,设计一种新型的多抽头电感结构的紧凑型宽带二等分功分器。所设计的功分器基于0.18μm SiGe BiCMOS工艺。射频/微波电磁仿真显示,在8~16 GHz的频带范围内,功分器的分配损耗小于0.8 dB,隔离度大于20 dB,端口回波损耗大于15 dB,核心电路版图面积仅为0.30 mm×0.25 mm,可满足宽带功分器低损耗、小型化、高隔离度的设计要求。In order to solve the problems of high loss and large size of traditional Wilkinson power dividers,starting from the theoretical analysis of power dividers,a new compact broadband equal division power divider with multi tap inductor structure is designed by improving the traditional microstrip line structure and LC lumped structure,and introducing frequency compensation capacitors at the isolation resistor.The designed power divider is based on 0.18μm SiGe BiCMOS process,and the RF/microwave electromagnetic simulation shows that in the frequency band range of 8-16 GHz,the distribution loss of the power divider is less than 0.8 dB,the isolation degree is greater than 20 dB,the port return loss is greater than 15 dB,and the core circuit ayout area is only 0.30 mm×0.25 mm,which can meet the design requirements of low loss,miniaturization,and high isolation of broadband power dividers.

关 键 词：WILKINSON功分器 多抽头电感 SIGE工艺 二等分结构 补偿电容 低损耗 小型化 

分 类 号：TN454-34[电子电信—微电子学与固体电子学]