一种用于STT-MRAM可缓解NBTI效应的灵敏放大器  

A Novel Sense Amplifier to Mitigate the Impact of negative bias temperature instability effect for STT-MRAM

作　　者：张丽 ZHANG li(Xidian-Wuhu Research Institute)

机构地区：[1]西安电子科技大学芜湖研究院

出　　处：《中国集成电路》2024年第5期62-66,71,共6页China lntegrated Circuit

摘　　要：自旋转移力矩磁随机存储器(STT-MRAM)是存内计算体系结构中非易失性存储器的热点器件。随着器件尺寸的减小,STT-MRAM电路性能会因为工艺电压温度的变化而退化,电路中的PMOSFET也因为负偏压温度不稳定性(NBTI)引发的退化越来越严重。为降低NBTI效应造成的PMOSFET性能退化以及工艺电压温度变化对STT-MRAM读取电路的影响,本文设计了一款包含开关器件的读取灵敏放大器,仿真结果表明所设计的灵敏放大器可有效降低NBTI对PMOSFET特性的影响,同时降低了电路对工艺变化的灵敏度。Spin-transfer torque random access memory(STT-MRAM)is promising candidate of non-volatile memory used in memory computing.However,with technology scaling down,STT-MRAM is affected by high sensitivity to process voltage and temperature(PVT)variations.Additionally,the negative bias temperature instability(NBTI)effect has become an important factor affecting the life of the PMOSFET used in the sense amplifier of STT-MRAM.In this paper,we propose a novel architecture of a sense amplifier,which includes switching transistors to minimize the NBTI effect on the PMOSFET device,and a balanced transistor to decrease the sensitivity of the sense amplifier to process variations.Finally,simulation results have been present to show the effectiveness and improvement of the proposed sense amplifier scheme.

关 键 词：自旋转移力矩磁随机存储器 磁隧道结 灵敏放大器 负偏压温度不稳定性 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]