碳化硅晶圆高温磁控溅射制备铝薄膜异常结晶现象  

Abnormal Crystallization Phenomenon of Aluminum Films Prepared by High Temperature Magnetron Sputtering on SiC Wafers

作　　者：王川宝[1,2] 默江辉 朱延超[1] 王帅 张力江 付兴中[1] Wang Chuanbao;Mo Jianghui;Zhu Yanchao;Wang Shuai;Zhang Lijiang;Fu Xingzhong(The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China;Hebei Bowei Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]河北博威集成电路有限公司,石家庄050200

出　　处：《微纳电子技术》2024年第5期157-161,共5页Micronanoelectronic Technology

摘　　要：在碳化硅表面使用高温磁控溅射法制备铝薄膜过程中有时会出现异常“斑点”现象,针对出现该异常现象可能的原因进行了研究,确认其主要因素为溅射温度和溅射功率,SiC表面状态和金属体系对异常现象的出现影响很小。采用白光干涉仪测定正常和异常区域表面形貌和粗糙度,结果表明“斑点”区域粗糙度明显低于正常区域,两者分别为1.7和5.6 nm。采用聚焦离子束分析技术对比剖面结构差异,发现“斑点”区域存在明显晶粒合并现象,金属表面晶界比正常区域少很多。“斑点”形成的可能原因是沉积过程温度过高,导致Al膜沉积初始成核过程中大量晶核合并、晶界消失,从而表面粗糙度显著降低。The abnormal"spot"phenomenon sometimes occurs in the process of aluminum films prepared by magnetron sputtering method on the surface of silicon carbide at high temperature.The possible reasons for the abnormal phenomenon were studied.It is confirmed that the main factors leading to the abnormal occurrence are sputtering temperature and sputtering power,and the SiC surface state and metal system have little influence on the occurrence of abnormal phenomenon.The surface morphologies and roughnesses of normal and abnormal areas were measured by white light interferometer.The result shows that the roughness of the"spot"area is significantly lower than that of the normal area,which is 1.7 and 5.6 nm,respectively.Using focused ion beam analysis technology to compare the difference of the cross-section structures,grain merging phenomenon is found in the"spot"area,and the grain boundaries on the surface of metal are much less than that in the normal area.The possible reason for the formation of"spot"is that the temperature of deposition process is too high,which leads to the merger of a large number of nuclei and the disappearance of grain boundaries in the initial nucleation process of Al film deposition,so that the surface roughness is significantly reduced.

关 键 词：SiC晶圆 铝薄膜 磁控溅射 异常结晶 溅射温度 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TN305.92[电子电信—物理电子学]