基于氧化物-金属多层膜固态化合方法制备MCNO薄膜  

Preparation of MCNO thin films by solid-state reaction of oxide-metal multilayers

作　　者：赵媛媛 王园园 王荣新[2] 王志鹏 朱煜 宋贺伦[2] 向阳[1] Zhao Yuanyuan;Wang Yuanyuan;Wang Rongxin;Wang Zhipeng;Zhu Yu;Song Helun;Xiang Yang(School of Opto-Electronic Engineering,Changchun University of Science and Technology,Changchun 130022,China;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]长春理工大学光电工程学院,吉林长春130022 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《红外与激光工程》2024年第4期223-232,共10页Infrared and Laser Engineering

基　　金：苏州市碳达峰碳中和科技支撑重点专项(ST202219);江苏省碳达峰碳中和科技创新专项(BE2022021)。

摘　　要：红外热成像技术具有高度实用性、灵敏性和可靠性等优点,在航空、医疗等多个领域发挥着重要作用。相较于其他类型的非制冷红外探测器,测微辐射热计(Microbolometer)具有工作范围宽、响应速率快且器件结构简单等优点。相较于非晶硅和氧化钒等常见热敏层材料,立方尖晶石结构的过渡金属氧化物锰钴镍氧化物(Mn-Co-Ni-O,MCNO)具有更高的TCR系数。使用磁控溅射法-电子束蒸发复合法在蓝宝石(Al_(2)O_(3))衬底上制备MCNO薄膜,结合XRD、SEM和电学性能测试,分析和探讨了工艺条件对其性能的影响。研究结果表明,在450℃沉积5 h得到厚度为450 nm的MCNO薄膜样品,随后在真空腔内原位退火1 h,再使用管式退火炉在空气氛围中进行60 min 850℃后退火,MCNO薄膜呈现出良好性能,(111)晶相的XRD半峰宽为0.48,晶格常数为8.71A(1A=10^(-10) m),晶粒平均大小为81.7±24 nm。使用四探针法测试MCNO薄膜室温下电阻率为642.19Ω·cm,室温下(295 K)电阻温度系数(Temperature Coefficient of Resistance,TCR)系数为-4.20%/K。在6~8.5μm波长范围内,最高吸光度为1.50。研究结果验证了所提出的多层复合方法用于制备MCNO薄膜的可行性,为进一步优化MCNO薄膜组份与掺杂配比以及结构-性能关系提供了新思路。Objective Microbolometers offer advantages such as wide working range,fast response time,and simple device structure.The working principle is that infrared radiation incidents on the absorption layer,generating thermal energy which is then transferred to the thermosensitive material.The thermosensitive material changes its electrical resistance upon absorbing the heat and thus produces a change in output signal detected by the readout circuit.The thermosensitive layer has a significant impact on the performance of microbolometer.Currently,the main industrial materials for the thermosensitive layer are vanadium oxide and amorphous silicon,with a general temperature coefficient of resistance(TCR)of-2%/K.Compared to vanadium oxide and amorphous silicon,manganese cobalt nickel oxide(MCNO)with high TCR coefficients has great potential in uncooled infrared detector applications.Unlike most MCNO thin films prepared by magnetron sputtering of a stoichiometric compound,this paper reports the synthesis of MCNO by combining magnetron sputtering and electron beam evaporation.MnO_(2) and Co_(2)O_(3) were co-sputtered initially,followed by e-beam evaporation of Ni.Multilayers of MnO_(2)-Co_(2)O_(3) oxides and Ni were thus deposited alternatively and subjected to in-situ and/or post-annealing to promote interdiffusion and the formation of MCNO compound.The objective was to investigate the feasibility of the new fabrication method based on solid state synthesis.The prepared thin films showed good crystallinity and negative temperature coefficient of resistance,indicating that the proposed method could be applied to further fine-tuning the compositions of MCNO thin films in the future.Methods Thin films were prepared using a magnetron sputtering-electron beam evaporation hybrid method using a laboratory-developed high vacuum coating unit,where an e-gun and two magnetron sputtering targets coexisted in the same chamber.The sample stage was controlled by a stepper motor for 180-degree rotation,thus enabling alternative up-facing ma

关 键 词：锰钴镍氧化物 磁控溅射 电子束蒸发 逐层沉积 退火温度 固相合成 

分 类 号：TN215[电子电信—物理电子学]