双栅GaN HEMT生物传感器仿真研究  

Simulation of dual-gate GaN HEMT biosensor

作　　者：王保柱[1] 刘莎 张明 杨琳 段磊 WANG Baozhu;LIU Sha;ZHANG Ming;YANG Lin;DUAN Lei(School of Information Science and Engineering,Hebei University of Science and Technology,Shijiazhuang050018,China;Hebei Bowei Integrated Circuits Co.,Ltd.,Shijiazhuang050200,China)

机构地区：[1]河北科技大学信息科学与工程学院,河北石家庄050018 [2]河北博威集成电路有限公司,河北石家庄050200

出　　处：《电子元件与材料》2024年第4期411-416,共6页Electronic Components And Materials

基　　金：河北省自然科学基金(F2020208005)。

摘　　要：GaN HEMT因具有优异的高灵敏度、快速响应特性、电学特性和生物相容性,其在生物传感领域具有广泛的应用潜力。为提升GaN HEMT生物传感器直接检测生物分子的灵敏度,提出了一种双栅结构分析模型,并使用Silvaco TCAD工具研究了其电学特性。从漏极电流、阈值电压和电势方面分析了单栅和双栅器件的结构特性,比较了其灵敏度。研究表明,在特定生物分子(尿酸酶、链霉亲和素、蛋白质和胆固醇氧化酶)的检测中,双栅GaN HEMT生物传感器的灵敏度分别比单栅器件高1.55%,2.18%,1.07%和3.3%。其中,增加空腔长度可以为生物分子与生物功能化层(AlGaN)的相互作用提供更多的面积,从而使传感器的灵敏度增加。因此,双栅和较大空腔的GaN HEMT生物传感器器件更适用于高灵敏度的应用。Due to their excellent high sensitivity,fast response characteristics,electrical properties,and biocompatibility,GaN HEMTs have broad potential applications as the biosensors.To solve the sensitivity problem of GaN HEMT biosensors for direct detection of the biomolecules,a dual-gate structure analysis model was proposed,and its electrical characteristics were studied using Silvaco TCAD tools.The structural characteristics of single-gate and dual-gate devices were analyzed through the drain current,threshold voltage and potential,and their sensitivities were compared with each other.The result show that,in the detection of specific biomolecules(Uricase,Streptavidin,Protein and Chox),the sensitivity of dual-gate GaN HEMT biosensor devices is 1.55%,2.18%,1.07%,and 3.3%higher than that of single-gate devices,respectively.The increase of the cavity length can provide more area for the interaction between the biomolecules and biofunctionalized layer(AlGaN),thereby increasing the sensitivity of the sensor.Thus,dual-gate and larger cavity GaN HEMT biosensor devices are more suitable for high sensitivity applications.

关 键 词：双栅 生物传感器 GAN HEMT 灵敏度 

分 类 号：TN386[电子电信—物理电子学]