低维InP材料的表征和生长机理研究  

Characterization and Growth Mechanisms of Low Dimensional InP Materials

作　　者：牛艳萍 马淑芳 董浩琰 阳智 郝晓东 韩斌[1] 吴胜利[2] 董海亮[3] 许并社 NIU Yanping;MA Shufang;DONG Haoyan;YANG Zhi;HAO Xiaodong;HAN Bin;WU Shengli;DONG Hailiang;XU Bingshe(Xi’an Key Laboratory of Compound Semiconductor Materials and Devices,Shaanxi University of Science and Technology,Xi’an 710021,China;Department of Hepatobiliary Surgery,the First Affiliated Hospital of Xi’an Jiaotong University,Xi’an 710061,China;Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education,Taiyuan University of Technology,Taiyuan 030024,China;Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Taiyuan 030024,China)

机构地区：[1]陕西科技大学西安市化合物半导体材料与器件重点实验室,陕西西安710021 [2]西安交通大学第一附属医院肝胆外科,陕西西安710061 [3]太原理工大学教育部先进材料界面科学与工程重点实验室,山西太原030024 [4]山西浙大新材料与化工研究院,山西太原030024

出　　处：《发光学报》2024年第5期779-793,共15页Chinese Journal of Luminescence

基　　金：国家自然科学基金(21972103);山西浙大新材料与化工研究院(2022SX-TD018,2021SX-AT007)。

摘　　要：磷化铟作为一种重要的Ⅲ-Ⅴ半导体材料,由于其独特的光学和电学特性,近年来备受关注。大量的研究表明,它在光电子、催化、医学等领域具有潜在的应用前景。但目前在低维InP纳米材料的可控制备和大规模合成研究中还存在一些问题有待解决。针对上述问题,采用化学气相沉积法(CVD)在Si/SiO_(2)衬底上成功地制备了大量高质量的InP纳米线,并用原位生长法在多晶InP衬底上生长了大量的InP纳米柱。利用扫描电子显微镜(SEM)观察所制备的纳米材料的形貌,纳米线表面光滑,直径在30~65 nm之间,纳米线组成的薄膜厚度约为35μm;纳米柱直径分布为550~850 nm,纳米柱组成的薄膜厚度约为12μm。利用能量色散谱(EDS)和X射线光电子能谱(XPS)分析了所制备的纳米材料的成分为InP。用拉曼光谱法测定了纳米材料的化学结构,并做了进一步的分析。透射电子显微镜(TEM)用于观察纳米材料的微观结构。研究发现,本研究制备的纳米线具有很高的结晶度,沿着[111]方向生长。使用选区电子衍射(SAED)分析纳米线晶体特性时发现了清晰的衍射点,表明其为单晶结构。使用光致发光光谱仪(PL)分析其发光特性,并进一步分析。最后,我们讨论了纳米线和纳米柱的形成机制,纳米线的生长遵循气-液-固(VLS)机制,纳米柱的生长遵循固-液-固(SLS)机制。这些研究为控制InP纳米材料的制备和大规模生产提供了更多可能性。Indium phosphide(InP)is an importantⅢ⁃Ⅴsemiconductor material that has recently received considerable attention because of its unique optical and electrical properties.Numerous studies have demonstrated its potential applications in optoelectronics,catalysis,and medicine.However,challenges remain in the controllable preparation and large-scale synthesis of low dimensional InP nanomaterials.In addressing these issues,we successfully produced a remarkable quantity of high-quality InP nanowires on Si/SiO_(2) substrates using chemical vapor deposition(CVD).In addition,we grew a substantial amount of InP nanopillars on polycrystalline InP substrates using the in-situ growth method.The nanomaterials were observed using scanning electron microscopy(SEM).The nanowires had smooth surfaces with diameters ranging from 30 nm to 65 nm,and the film composed of nanowires was approximately 35μm thick.The nanopillars had diameters distributed in the range of 550−850 nm,and the film composed of nanopillars was approximately 12μm thick.The nanomaterials were analyzed using energy dispersive spectroscopy(EDS)and X-ray photoelectron spectroscopy(XPS)to determine their composition,which was found to be InP.Raman spectroscopy was used to determine the chemical structure of the nanomaterials,which was further analyzed.Transmission electron microscopy(TEM)was used to observe the microstructure of the nanomaterials.The nanowires prepared for this study were found to have a high degree of crystallinity,with growth in the[111]direction.Analysis of the nanowire crystal properties using selected area electron diffraction(SAED)revealed clear diffraction points indicating a single crystal structure.Luminescence properties were analyzed using photoluminescence(PL)spectroscopy.Furthermore,the formation mechanism of nanowires and nanopillars was discussed.Nanowires grew following the vapor-liquid-solid(VLS)mechanism,whereas nanopillars grew following the solid-liquid-solid(SLS)mechanism.These studies provide additional opportunities for

关 键 词：磷化铟 纳米线 纳米柱 材料特性 生长机制 

分 类 号：O482.31[理学—固体物理]