用于特殊环境的薄膜应变计的制备与表征  

Fabrication And Characterization of Thin Film Strain Gauge for Strain Measurement Under Special Environment

作　　者：张丛春[1] 康志鹏 雷鹏[1,2] 闫博 ZHANG Congchun;KANG Zhipeng;LEI Peng;YAN Bo(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学微米/纳米加工技术国家重点实验室,上海200240 [2]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《传感技术学报》2024年第4期589-596,共8页Chinese Journal of Sensors and Actuators

基　　金：2023年度“慧眼行动”项目。

摘　　要：使用磁控溅射制备了卡玛合金薄膜应变计,研究了退火温度对薄膜微观结构的影响,测试了薄膜的电学性能以及压阻响应特性,并进行了环境实验。结果表明,随着退火温度升高,薄膜的电阻率逐渐下降,电阻温度系数则逐渐升高,在室温下有最小的电阻温度系数(TCR),约为59.9×10^(-6)/℃,经过200℃退火处理的薄膜应变计的应变灵敏度系数(GF)为2.2,TCR为64.4×10^(-6)/℃。经历温湿循环、盐雾、霉菌试验后,薄膜的压阻特性变化不大,能耐受海洋特殊环境。RF sputtering is used to create Karma alloy thin film strain gauges on alumina substrates.Karma alloy thin films’changes in e-lectrical characteristics and strain properties at various annealing temperatures are evaluated,and it is determined how annealing tempera-ture affects the surface morphology and crystal structure of Karma alloy thin films.The results demonstrate that as the annealing tempera-ture increases,the resistivity of the Karma alloy thin films gradually decreases,and its temperature coefficient of resistance gradually in-creases.Karma thin film strain gages are discovered to have the lowest TCR of 59.9×10^(-6)/℃under room temperature.After 200℃an-nealing process,the Karma alloy thin films achieve the gage factor of 2.2,and the TCR of 64.4×10^(-6)/℃.The piezoresistive characteristic of the thin film changes slightly after experiments of temperature humidity cycling,salt spray,and molding,it has ability to withstand the harsh conditions of the sea.

关 键 词：磁控溅射 薄膜应变计 电阻温度系数 应变因子 环境实验 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置]