深低温工作甚长波面阵红外探测器封装技术  

Packaging Technology for Very Long Wave Array Infrared Detectors Working at Deep Low Temperature

作　　者：方志浩 付志凯 王冠[1] 张磊[1] FANG Zhi-hao;FU Zhi-kai;WANG Guan;ZHANG Lei(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2024年第5期18-22,共5页Infrared

摘　　要：基于甚长波红外探测器对低于液氮温度工作环境的需求,提出了一种深低温工作甚长波红外探测器封装技术。通过对杜瓦组件漏热和芯片电学引出结构的优化设计,可控制芯片在30 K低温工作时整个杜瓦组件的静态热耗为0.65 W,最冷端位置的静态热耗为0.3 W,与之适配的两级脉管制冷机冷量可以满足上述热耗需求。完成了探测器组件的封装测试。结果表明,在制冷机膨胀机热端空气冷却测试条件下,探测器芯片部分可达到35 K的温度;杜瓦的外轮廓小于Φ130 mm×180 mm。该项技术成果促进了深低温工作的甚长波面阵红外探测器封装技术的发展。Based on the demand of working environments below liquid nitrogen temperature for very long wave infrared detectors,a kind of packaging technology for very long wave infrared detectors working at deep low temperature is proposed.Through innovative optimization design of the heat leakage and the chip electrical lead structure of the dewar,the static thermal load of the entire dewar can be controlled to be 0.65 W when the chip operates at a low temperature of 30 K,and the static thermal load at the coldest end position is 0.3 W.The cooling capacity of the two-stage pulse tube refrigerator that is compatible with the dewar can meet the above thermal load requirements.The packaging test of the detector component is completed.The results show that under the air cooling test condition of the refrigerator expander′s hot end,the detector chip can reach the temperature of 35 K,and the outer contour of the dewar is smaller than Φ130 mm×180 mm.This technological achievement has promoted the progress of packaging technology for very long wave array infrared detectors operating at deep low temperature.

关 键 词：超低温 甚长波红外探测器 封装技术 

分 类 号：TG665[金属学及工艺—金属切削加工及机床]