基于GaNFET的窄脉冲激光驱动设计及集成  

Design and Integration of Narrow Pulse Laser Drive Based on GaN FET

作　　者：胡涛 孟柘 李锋 蒋衍 胡志宏 刘汝卿 袁野 朱精果 HU Tao;MENG Zhe;LI Feng;JIANG Yan;HU Zhihong;LIU Ruqing;YUAN Ye;ZHU Jingguo(Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 101408,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]中国科学院大学,北京101408

出　　处：《电子与封装》2024年第5期79-84,共6页Electronics & Packaging

摘　　要：激光雷达的整机性能与激光脉冲的驱动性能密切相关,现有的窄脉冲激光驱动设计主要基于Si基器件,具有较高的集成度,但很难获得更高峰值的功率输出,不能很好地匹配脉宽进一步缩窄的要求。从驱动理论出发,建立驱动电路模型,对寄生电感、器件封装、驱动布局等影响激光窄脉宽的因素进行分析,通过裸芯片封装、环路布局优化以及多层叉指结构等的设计,匹配GaNFET优良的开关特性,实现了上升时间为2.01ns、脉宽为4.05ns、重复频率为500kHz、峰值功率为55W的窄脉冲激光输出,波形质量较好,封装集成度提升50%以上,可为下一代高精度、远距离、阵列集成激光雷达系统的开发奠定基础。The overall performance of LiDAR is closely related to the driving performance of the laser pulse,the existing narrow pulse laser drive design is mainly based on Si-based devices,which have a high degree of integration,but it is difficult to obtain a higher peak power output,and cannot well match the needs of further narrowing of the pulse width.Starting from the drive theory,the drive circuit model is established,the factors affecting the narrow pulse width of the laser,such as parasitic inductance,device packaging,and drive layout,are analyzed.Through the design of bare chip packaging,loop layout optimization,and multi-layer interdigital structure,matching the excellent switching characteristics of GaN FET,a narrow pulse laser output with a rise time of 2.01 ns,a pulse width of 4.05 ns,a repetition frequency of 500 kHz,and a peak power of 55 W is achieved with good waveform quality,while the package integration can be improved by more than 50%,which can lay the foundation for the development of next-generation high-precision,long-range,array-integrated LiDAR system.

关 键 词：窄脉冲驱动 GaNFET 激光雷达 裸芯片封装 分离式放电环路 多层叉指结构 

分 类 号：TN784.1[电子电信—电路与系统] TN248.4