Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates  

作　　者：Luming Yu Xun Wang Zhibiao Hao Yi Luo Changzheng Sun Bing Xiong Yanjun Han Jian Wang Hongtao Li Lin Gan Lai Wang 

机构地区：[1]Beijing National Research Center for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Bei-jing 100084,China [2]Center for Flexible Electronics Technology,Tsinghua University,Beijing 100084,China

出　　处：《Journal of Semiconductors》2024年第6期92-96,共5页半导体学报（英文版）

基　　金：the National Key Research and Development Program(2021YFA0716400);the National Natural Science Foundation of China(62225405,62350002,61991443);the Key R&D Project of Jiangsu Province,China(BE2020004);the Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics.

摘　　要：Growth of gallium nitride(GaN)inverted pyramids on c-plane sapphire substrates is benefit for fabricating novel devices as it forms the semipolar facets.In this work,GaN inverted pyramids are directly grown on c-plane patterned sapphire substrates(PSS)by metal organic vapor phase epitaxy(MOVPE).The influences of growth conditions on the surface morphol-ogy are experimentally studied and explained by Wulff constructions.The competition of growth rate among{0001},{1011},and{1122}facets results in the various surface morphologies of GaN.A higher growth temperature of 985 ℃ and a lowerⅤ/Ⅲratio of 25 can expand the area of{}facets in GaN inverted pyramids.On the other hand,GaN inverted pyramids with almost pure{}facets are obtained by using a lower growth temperature of 930℃,a higherⅤ/Ⅲratio of 100,and PSS with pattern arrangement perpendicular to the substrate primary flat.

关 键 词：inverted pyramids GAN MOVPE crystal growth competition model 

分 类 号：TN3[电子电信—物理电子学]