SDB-SOI制备过程中工艺控制  

Control of the SDB-SOI Processing Process

作　　者：刘洋[1] LIU Yang(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2024年第3期20-23,共4页Equipment for Electronic Products Manufacturing

摘　　要：SOI(Silicom-On-Insulator)晶圆是绝缘氧化物上有一层薄硅膜的硅晶圆。在SDB-SOI晶圆制备过程中,需要在进行晶圆键合、磨削、抛光等工序过程中,通过对键合空腔、顶硅厚度、顶硅TTV、顶硅形状、顶硅表面等参数的控制,可以降低后续工序加工难度,最终制备出高质量的产品。SOI(Silicom-On-Insulator)wafer is a silicon wafer with a thin silicon film on an insulating oxide.In the process of SDB-SOI wafer preparation,it is necessary to conduct wafer bonding,grinding,polishing and other processes,through the bonding cavity,top silicon thickness,top silicon TTV,top silicon shape,top silicon surface and other parameters control,the difficulty of subsequent processing can be reduced,and high-quality products are finally prepared.

关 键 词：硅晶圆 绝缘衬底上硅(SOI) 键合 磨削 

分 类 号：TN305[电子电信—物理电子学]