短沟道负电容GAAFET的物理解析模型的理论推导  

Theoretical derivation of the physical analytical model of short-channel negative capacitance gate-all-around field effect transistor

作　　者：白刚 陈成[1] BAI Gang;CHEN Cheng(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210026,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院,江苏南京210023

出　　处：《大学物理》2024年第4期36-39,55,共5页College Physics

基　　金：国家自然科学基金(51602159);南京邮电大学校级自然科学基金(NY222128)资助。

摘　　要：围栅场效应晶体管的EDA设计软件是我国芯片产业“卡脖子”的关键技术之一,已经受到科学界与产业界的高度重视.本文首先通过合理近似推导出传统短沟道GAAFE的物理解析模型,然后在此基础上通过增加铁电层推导出负电容GAAFET的物理解析模型.该物理模型的理论推导有助于加深学生对GAAFET工作原理的理解,激发学生的学习兴趣,提高学生的研究能力.EDA design software of Gate-All-Around Field-Effect Transistor(GAAFET)is one of the key technologies in chip industry in our country,which has been paid high attention by science and industry.In this paper,the physical analytical model of the traditional short-channel GAAFET is derived by reasonable approximation,and then the physical analytical model of the negative capacitance GAAFET is derived by adding ferroelectric layer.The derivation of the physical model is helpful to deepen students understanding of the working principle of GAAFET,stimulate students learning interest and improve their research ability.

关 键 词：负电容 围栅场效应晶体管 短沟道 铁电 

分 类 号：TN47[电子电信—微电子学与固体电子学]