光刻工艺的特征参数及其影响因素分析  

Characteristic Parameters and Influencing Factors of Photolithography Process

作　　者：文青山 黄华佑 杨丹 李运泉 WEN Qingshan;HUANG Huayou;YANG Dan;LI Yunquan(Guangdong Institute of Special Equipment Inspection and Research Shunde Branch,Foshan,Guangdong 528000,China)

机构地区：[1]广东省特种设备检测研究院顺德检测院,广东佛山528000

出　　处：《信息记录材料》2024年第5期4-6,9,共4页Information Recording Materials

基　　金：超净高纯化学试剂分离纯化及其应用研究(2024QT-2-01);半导体晶圆全自动涂胶显影系统研制(2024QT-2-02)。

摘　　要：光刻胶是半导体制造中关键的材料,用于光刻工艺中转移图案到硅片。随着微电子工艺的发展、曝光光源的不断进步和器件尺寸的缩小,光刻胶的性能指标正在不断提高,以满足更高的分辨率、灵敏度以及更低的线边粗糙度等工艺要求。本文探讨了光刻胶的工艺特征参数及其影响因素,并提出了光刻胶的未来展望。Photoresist is a crucial material in semiconductor manufacturing,used to transfer patterns to silicon wafers in lithography processes.With the development of microelectronics technology,the continuous progress of exposure light sources,and the reduction of device size,the performance indicators of photoresists is constantly improving to meet the process requirements of higher resolution,sensitivity,and lower line edge roughness.This article explores the process characteristic parameters and influencing factors of photoresist,and proposes the future prospects of photoresist.

关 键 词：光刻胶 光刻工艺 工艺参数 

分 类 号：TN305[电子电信—物理电子学]