基于忆阻器的ML环状神经元网络的分岔与同步  

Bifurcation and synchronization of ML ring neural network with memristor

作　　者：钱雨晴 QIAN Yuqing(School of Mathematics and Physics,Lanzhou Jiaotong University,Lanzhou 730070,China)

机构地区：[1]兰州交通大学数理学院,甘肃兰州730000

出　　处：《商丘师范学院学报》2024年第6期24-28,共5页Journal of Shangqiu Normal University

摘　　要：鉴于神经元膜电位受电磁辐射影响产生感应电流反作用于神经元,在ML神经元模型上加入磁控忆阻器,构建含忆阻器的电、化学突触耦合ML环状神经元网络模型.首先通过分岔图分析忆阻器的磁反馈系数对神经网络放电活动的影响,并通过时间序列图与相图对系统放电周期加以验证.其次引入互相关系数R分析神经网络中神经元的同步情况,这对研究神经网络集群放电活动和同步机理有一定参考价值.Considering that the membrane potential of neurons is affected by electromagnetic radiation to produce induced current and react on neurons,a magnetron memristor is added to the ML neuron model,and an electrical and chemical synaptic coupled ML ring neuron network model with memristors is constructed.Firstly,the influence of the magnetic feedback coefficient of the memristor on the discharge activity of the neural network is analyzed by the bifurcation diagram,and firing of the system is verified by time series diagrams andphase diagrams.Secondly,the correlation number R is introduced to analyze the synchronization of neurons in the neural network,which has certain reference value for the study of neural network cluster discharge activity and synchronization mechanism.

关 键 词：忆阻器 环状网络 分岔 同步 

分 类 号：O193[理学—数学] O441[理学—基础数学]