偏置电压和温度对22 nm FDSOI器件单粒子瞬态的影响研究  

Bias voltage and temperature dependence of single-event transient in 22 nm FDSOI devices

作　　者：黄潇枫 李臣明[1] 王海滨[2] 孙永姝 王亮 郭刚[4] 汪学明 HUANG Xiaofeng;LI Chenming;WANG Haibin;SUN Yongshu;WANG Liang;GUO Gang;WANG Xueming(College of Artificial Intelligence and Automation,Hohai University,Changzhou 213200,China;College of Information Science and Engineering,Hohai University,Changzhou 213200,China;Beijing Institute of Microelectronics,Beijing 100076,China;National Innovation Center of Radiation Application,China Institute of Atomic Energy,Beijing 102413,China;CCTEG Changzhou Research Institute,Changzhou 213015,China)

机构地区：[1]河海大学人工智能与自动化学院,常州213200 [2]河海大学信息科学与工程学院,常州213200 [3]北京微电子技术研究所,北京100076 [4]中国原子能科学研究院国防科技工业抗辐照应用技术创新中心,北京102413 [5]中煤科工集团常州研究院有限公司,常州213015

出　　处：《集成电路与嵌入式系统》2024年第7期30-36,共7页Integrated Circuits and Embedded Systems

基　　金：国防科工局抗辐照应用技术创新基金重点项目(KFZC2020010401)。

摘　　要：针对22 nm FDSOI工艺在辐射环境下的单粒子瞬态问题,基于Sentaurus TCAD仿真工具对22 nm FDSOI NMOS进行建模,仿真研究了22 nm FDSOI NMOS的单粒子瞬态敏感区域,以及不同偏置电压和工作温度对单粒子瞬态的影响机理。仿真结果表明,22 nm FDSOI NMOS的敏感区域为体区和靠近体区的LDD区域;随着偏置电压的升高,漏端总收集电荷逐渐增大,漏端瞬态脉冲电流的脉冲宽度逐渐减小;相较于偏置电压对单粒子瞬态的影响,工作温度对22 nm FDSOI NMOS单粒子瞬态的影响并不明显。In order to investigate single-event transient(SET)of 22 nm FDSOI technology,we have built a FDSOI NMOS model based on Sentaurus TCAD and carried out various SET simulations in 22nm FDSOI NMOS.The sensitive region,bias voltage and temperature dependence of SET in 22 nm FDSOI NMOS have been examined.The simulation results show that the sensitive regions in 22 nm FDSOI NMOS are the body region and LDD region near the body region.As the bias voltage increases,the total collected charge is increasing,and the width of drain transient pulse current is declining.Compared to the bias voltage,the effect of operating temperature on SET in 22 nm FDSOI NMOS is not significant.

关 键 词：22 nm FDSOI 单粒子瞬态 亚阈值 TCAD 

分 类 号：TN432[电子电信—微电子学与固体电子学]